Partial discharge detection in power modules

Increasing operating voltages of Insulated Gate Bipolar Transistor (IGBT) modules results in higher demands on electrical insulation capabilities as well as partial discharge resistance. This paper discusses the insulation failure modes observed in high voltage power modules; most critical are water trees, Partial Discharge (PD) and electrical trees. Besides the review of insulation failure mechanisms, an experimental analysis method is discussed in order to identify possible failure source. Presented is a PD setup that includes a light sensitive CCD camera for optical inspection. Within the optical measurements, electroluminescence maps are also recorded in order to identify critical regions of high electrical fields. This method permits an analysis even before PD or electrical treeing begins. Optical PD inspections allow identifying PD failure root causes like protrusions or irregular edge shapes. In addition, investigations of PD failures on the ceramic substrate level have been performed and the distribution of inception voltages for one substrate type analyzed.

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“…see ref. [3][4][5][6]. This paper summarizes the critical insulation defects for power modules and addresses the failure root causes.…”

Section: Introductionmentioning

confidence: 99%

Analysis of insulation failure modes in high power IGBT modules

Fabian

Hartmann

Hamidi

Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005.

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“…Despite their importance, a scanty attention is provided in ascertaining their dielectric integrity and reliability while at service. Currently practiced methods mainly focus on ensuring the dielectric breakdown strength and Partial Discharge (PD) level of an IGBT module as a factory level acceptance criterion [1,2]. Pertinent tests are used only for decision making while the potential of PD is not fully utilized [2].…”

Section: Introductionmentioning

confidence: 99%

“…Currently practiced methods mainly focus on ensuring the dielectric breakdown strength and Partial Discharge (PD) level of an IGBT module as a factory level acceptance criterion [1,2]. Pertinent tests are used only for decision making while the potential of PD is not fully utilized [2]. In this context, extensive research has been carried out and there exists at least a decade of data and literatures which has resulted in development of new materials and improvement in existing technology [3].…”

Section: Introductionmentioning

confidence: 99%

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Arumugam

Gorchakov

Schoenemann

2015

IEEE Trans. Dielect. Electr. Insul.

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This paper investigates on dielectric condition assessment of high power Insulated Gate Bipolar Transistor (IGBT) modules through modern dielectric and diagnostic test methods. Two groups of IGBT samples (new and aged) are selected for this purpose. The new IGBT samples are grouped as 'set-1/virgin' and marked as 'A', 'B', 'C', 'D' and 'E' respectively. Amongst all, a fault (electric puncture) is introduced into the sample 'E'. The samples 'A' and 'B' are maintained virgin while samples 'C', 'D' and 'E' are subjected to partial discharge measurements as recommended by IEC60270.The samples are qualitatively ranked based on their PD level. Subsequently, the dielectric condition of each sample is measured and analyzed over a wide span and frequency. Following this, similar experiments are carried out on IGBT samples that were aged under service and their behaviour over a wide frequency is analyzed. In conclusion, the present study might provide an opportunity in improvement of diagnostic and quality control test methods that are currently exercised on IGBT modules and power conversion devices. Also, these findings enable discrimination of electrical discharges caused by IGBT modules in power conversion equipments which might help in accurate determination of their dielectric condition and reliability.

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“…However, there may be untested areas of silicone gels when the module leaves the factory owing to the inability of the standard module test method to stress all parts of the silicone gel encapsulation [2]. This is due to the test being carried out with all terminals being bonded to high voltage while in operation they can, depending on the exact nature of the switch position, be at different potentials [3]. Silicone gel should not age under the presence of an electric field alone [4] but may vary in performance according to the environmental conditions.…”

Section: Introductionmentioning

confidence: 99%

Partial discharge control in a power electronic module using high permittivity non-linear dielectrics

Wang

Cotton

Robertson³

et al. 2010

IEEE Trans. Dielect. Electr. Insul.

107

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High electric fields at the edge of the substrate metallization can give rise to partial discharge within power electronic modules and can lead to eventual failure. This paper examines the use of silicone gels filled with barium titanate to reduce the electric field enhancement at the edge of substrate metallization and therefore increase partial discharge inception voltages. The barium titanate filled gel produces a dielectric in which the relative permittivity is increased over a plain gel and that also exhibits a dependence on electric field. The theoretical electric field reduction that can be achieved in a power electronic module through the use of filled gels is demonstrated and compared against experimental measurements including the trial of the technique in some commercial modules. As promising results are achieved, consideration is also given to the effect of the barium titanate filler on the viscosity of the gel and the thermal conductivity, two key manufacturing issues.

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Partial discharge detection in power modules

Cited by 16 publications

References 2 publications

Analysis of insulation failure modes in high power IGBT modules

Analysis of insulation failure modes in high power IGBT modules

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Partial discharge control in a power electronic module using high permittivity non-linear dielectrics

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