Partial discharges in ceramic substrates embedded in liquids and gels

Augé, Jean-Louis; Lesaint, Olivier; Thi, A.T. Vu

doi:10.1109/tdei.2013.6451366

Cited by 39 publications

(36 citation statements)

References 20 publications

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“…Despite all publications, which have concluded that PDs occur in the silicone gel or at the interface between the substrate and the gel, a different conclusion about the origin of PDs was reported in [52]. To explore the actual origin of PDs, six insulating liquids including Silicon oil #1 (Sil20), Silicon oil #1 (Sil350), Transformer oil (Toil), Synthetic capacitor liquid (Scl), Synthetic transformer liquid (Stl) and Ester liquid (Est), which have different PD properties were used instead of gel, and three substrate materials including AlN, Al 2 O 3 , and glass/epoxy composite were also examined.…”

Section: The Quality and Type Of Substratesmentioning

confidence: 97%

Electrical Insulation Weaknesses in Wide Bandgap Devices

Ghassemi¹

2018

Simulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment

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The power electronics research community is balancing on the edge of a game-changing technological innovation: as traditionally silicon (Si) based power semiconductors approach their material limitations, next-generation wide bandgap (WBG) power semiconductors are poised to overtake them. Promising WBG materials are silicon carbide (SiC), gallium nitride (GaN), diamond (C), gallium oxide (Ga 2 O 3 ) and aluminum nitride (AlN). They can operate at higher voltages, temperatures, and switching frequencies with greater efficiencies compared to existing Si, in power electronics. These characteristics can reduce energy consumption, which is critical for national economic, health, and security interests. However, increased voltage blocking capability and trend toward more compact packaging technology for high-power density WBG devices can enhance the local electric field that may become large enough to raise partial discharges (PDs) within the module. High activity of PDs damages the insulating silicone gel, lead to electrical insulation failure and reduce the reliability of the module. Among WBG devices, electrical insulation weaknesses in WBG-based Insulated Gate Bipolar Transistor (IGBT) have been more investigated. The chapter deals with (a) current standards for evaluation of the insulation systems of power electronics modules, (b) simulation and modeling of the electric field stress inside modules, (c) diagnostic tests on modules, and (d) PD control methods in modules.

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Section: The Quality and Type Of Substratesmentioning

confidence: 97%

Electrical Insulation Weaknesses in Wide Bandgap Devices

Ghassemi¹

2018

Simulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment

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“…Typical cross section view of IGBT module breakdowns developing within the module. The final dielectric system is formed at the interface of these two components and it is this that is often the weakest point in a power module [12][13][14][15]. The qualities of ceramics and silicone gel definitely influence the PDs in the module, however, it could be proved that the electrical field strength reaches its peak at the edge of substrate metallization.…”

Section: Introductionmentioning

confidence: 99%

Electric Field Distribution in High Voltage Power Modules Using Finite Element Simulations

Wang

Liu²

2018

IOP Conf. Ser.: Earth Environ. Sci.

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Abstract. With the development of the high voltage insulated gate bipolar transistor (IGBT) power module, it leads to serious problems concerning the electric field insulation. The electric field capabilities of the silicone gels used in the power module encapsulation directly affect the module insulation. Some solutions have been developed to optimize the electric field and reliability. In this letter, the finite element simulation was used to analyze and localize the maximum electric field position; solutions were proposed to improve the module insulation. It's demonstrated that BaTiO3 silicone composite is a promising insulation material for high voltage power device.

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“…The localizations of the PD were identified by optical, acoustical, and PRPD measurements. [4][5][6][7][8][9][10][11] Also upcoming cracks or defects due to aging [12][13][14] as well as penetrating moisture, increasing temperature, or decreasing pressure [15] increase the PD activity and decrease the PDIV.…”

Section: Introductionmentioning

confidence: 99%

Partial Discharges in Ceramic Substrates - Correlation of Electric Field Strength Simulations with Phase Resolved Partial Discharge Measurements

Bayer

Waltrich

Soueidan

et al. 2016

Transactions of The Japan Institute of Electronics Packaging

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High voltages and the edges of the metallization on ceramic substrates (AMB, DBA, DBC, HTCC, LTCC) lead to high electric field strengths. In the vicinity of the metal edges these high electric field strengths induce partial discharges in the ceramic insulation and in the potting and thereby represent one key degradation mechanism of power modules. In this work the correlation of the simulated electric field strength with phase resolved partial discharge (PRPD) measurements has been investigated. For the simulation of the electric field strength a new method was used to bypass numerical artifacts. The simulated values show that it is possible to reduce the electric field strength by an adaption of the metallization structure. There the distance of the upper and the lower metallization to the rim of the ceramic was changed relative to each other. Due to this variation a reduction of the electric field strength of about 30% can be reached by choosing the optimum distance compared to state of the art design. In PRPD measurements for insulating ceramic substrates (AlN/Al 2 O 3 by DCB) we examined whether the electric field strength reduction leads to higher partial discharge inception voltages (PDIV). The measurements were executed on layouts with different dimensions of the upper and lower metallization relative to each other as well as for 3 different thicknesses of the ceramic insulation layer. An increase from 20% to 35% of the PDIV was measured for layouts designed according to the findings from the simulation with respect to electric field strength reduction. Finally, the calculated electric field strength and the measured PDIV were correlated.

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Partial discharges in ceramic substrates embedded in liquids and gels

Cited by 39 publications

References 20 publications

Electrical Insulation Weaknesses in Wide Bandgap Devices

Electrical Insulation Weaknesses in Wide Bandgap Devices

Electric Field Distribution in High Voltage Power Modules Using Finite Element Simulations

Partial Discharges in Ceramic Substrates - Correlation of Electric Field Strength Simulations with Phase Resolved Partial Discharge Measurements

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