Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

Abderrahmane, Abdelkader; Tashiro, Takuya; Takahashi, Hideki; Ko, Pil Ju; Okada, Hiroshi; Sato, Shin-ichiro; Ohshima, Takeshi; Sandhu, Adarsh

doi:10.1063/1.4861902

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…Moreover, the 3D simulation results and measured electrical characteristics of Hall sensor such as offset voltage, Hall voltage, sensitivity, and temperature related characteristics are discussed systematically. Finally, the experimental results prove that the fabricated Hall sensor in this work can work stably at 573 K with smaller temperature coefficient compared with that in other sensors reported in the literatures [8,9].…”

Section: Introductionsupporting

confidence: 66%

“…However, these Hall devices still suffer from performance degradation or other reliability issues at high temperature of more than 400 K due to their narrow bandgap which causes significant intrinsic conduction of internal carriers [8]. Actually, a harsh environment with high temperature up to 500 K has to be faced in some extreme applications such as space detection and magnetic sensors in thermonuclear power stations [9].…”

Section: Introductionmentioning

confidence: 99%

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AlGaN/GaN magnetic sensors featuring heterojunction 2DEG channel

Zhang

Huang

et al. 2021

Meas. Sci. Technol.

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Magnetic sensors based on the principle of Hall effect are widely used in various applications for detection and control of displacement, speed, angle, and rotation speed. Nowadays, the conventional Hall sensors are made of the narrow bandgap semiconductors. The typical ones are silicon (Si), indium antimonide (InSb), and gallium arsenide (GaAs). With the rapid increase in the need for high-temperature magnetic detections especially in the space exploration and thermonuclear power stations, they cannot meet the requirement of operation at high temperature due to the limitation of their natural characteristics such as low carrier mobility or small bandgap. In this work, the Hall sensors based on the third-generation semiconductor gallium nitride (GaN) were demonstrated by employing both the simulation and device fabrication schemes. The developed AlGaN/GaN heterojunction Hall sensors benefited from the presence of two-dimensional electron gas (2DEG) are small in size, and have an improved magnetic sensitivity and stability at high temperature. They exhibit a large current-related magnetic sensitivity up to 94.6 V A −1 T −1 and a low temperature coefficient less than 745 ppm K −1 , which is obviously improved compared with those in the currently commercialised semiconductor Hall sensors. Moreover, the Hall sensors developed in this work can be widely used in various harsh environments with high temperature (>573 K) and intense radiation in future.

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Section: Introductionsupporting

confidence: 66%

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN magnetic sensors featuring heterojunction 2DEG channel

Zhang

Huang

et al. 2021

Meas. Sci. Technol.

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“…Previously published literature mainly focused on a single type of radiation effect on the Hall sensor under a certain radiation source, such as gamma [ 13 , 14 , 15 ], proton [ 16 , 17 ], and neutron radiation [ 18 , 19 ]. Karlova et al [ 14 ] studied the influence of gamma radiation on sensors based on GaAs.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the analysis of the effects of irradiation on magnetoelectric properties such as the Hall voltage and sensitivity has not been investigated. Abderrahmane et al [ 16 ] have irradiated GaN-based Hall sensors by protons with the energy of 380 keV and fluence from 10 14 p/cm 2 to 10 16 p/cm 2 . The changes in the electron mobility, sheet resistance, and sensitivity of the sensors before and after irradiation have been observed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Fan

et al. 2020

Sensors

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This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

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