2000
DOI: 10.1103/physrevlett.85.397
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Partially Suppressed Shot Noise in Hopping Conduction: Observation in SiGe Quantum Wells

Abstract: We have observed shot noise in the hopping conduction of two-dimensional carriers confined in a p-type SiGe quantum well at a temperature of 4 K. Moreover, shot noise is suppressed relative to its "classical" value 2eI by an amount that depends on the length of the sample and the carrier density. We have found a suppression factor to the classical value of about one-half for a 2 &mgr;m long sample, and of one-fifth for a 5 &mgr;m sample. In each case, the factor decreased slightly as the density increased towa… Show more

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Cited by 36 publications
(41 citation statements)
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“…To summarize, simulations of shot noise at 2D hopping have confirmed our previous hypothesis 4) that in the absence of substantial Coulomb interaction, the Fano factor F in sufficiently large samples scales approximately inversely with L. This fact, which has also been confirmed in recent experiments with lateral transport in SiGe quantum wells 7) and GaAs MOSFET channels, 8) may have substantial implications for the design of singleelectron devices immune to random offset charges. …”
Section: )supporting
confidence: 66%
“…To summarize, simulations of shot noise at 2D hopping have confirmed our previous hypothesis 4) that in the absence of substantial Coulomb interaction, the Fano factor F in sufficiently large samples scales approximately inversely with L. This fact, which has also been confirmed in recent experiments with lateral transport in SiGe quantum wells 7) and GaAs MOSFET channels, 8) may have substantial implications for the design of singleelectron devices immune to random offset charges. …”
Section: )supporting
confidence: 66%
“…In long enough samples, the experiments in 2D VRH regime [11,12] find that the Fano factor decays with the sample length roughly as F ∝ L −1 . This behavior is qualitatively explained by the averaging of the Poissonian noises associated with different hops, analogous to noise averaging in a one-dimensional array of N identical tunnel junctions F = 1/N [13].…”
mentioning
confidence: 99%
“…In the VRH conduction regime, however, the hopping rates are spread exponentially wide, so that only the most resistive hops (so called hard hops) are important for the noise averaging [11,12]. A typical distance between these hard hops, known as a correlation length L C of the critical cluster [9], represents a length scale for the Fano-factor [11,12] …”
mentioning
confidence: 99%
“…A wide variety of noise behaviors due to localized states in mesoscopic systems have been studied both theoretically [13][14][15][16] and experimentally. [17][18][19][20][21] On the other hand, a clear demonstration of the shot noise behavior of an ideal tunnel barrier is still missing for semiconductor systems. In this paper, we report our observation of such a behavior in semiconductor tunnel barriers under various measurement configurations.…”
mentioning
confidence: 99%
“…These results are similar to those from other groups. 17,19,20 the data requires information of the microscopic details ͑e.g., coupling between localized states and contacts͒ of the barrier. Figure 3 shows the results of similar measurements on four different barriers of the smaller size.…”
mentioning
confidence: 99%