Particle detectors based on semiconducting InP epitaxial layers

Abstract

A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n-and p-type conductivity with carrier concentration on the order of 10 14 cm −3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241 Am source at room temperature.

Particle detectors based on InP Schottky diodes

“…As a result, the operation of such detectors at room temperature (RT) is restricted by a high-leakage current, which must be reduced by cooling. As was presented in our previous work, p-n junction detector structure with low noise performance can be realized on high purity InP epitaxial layers of both n-and p-type conductivity [6].…”