Particle Removal by Surfactants During Semiconductor Cleaning

Yerriboina, Nagendra Prasad; Poddar, Maneesh Kumar; Park, Jin-Goo

doi:10.1016/b978-0-12-822216-4.00001-x

Cited by 4 publications

(1 citation statement)

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Re-adhesion can be migrated through zeta potential adjustments 79 or use of surfactants. [80][81][82][83] Mechanisms of CNP removal with GDWs under megasonic conditions.-The mechanisms underlying the removal of CNPs from the SiO 2 film surface by GDW supply and under megasonic conditions are depicted in Fig. 13.…”

Section: Resultsmentioning

confidence: 99%

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO₂ Film Surface in Post-CMP Cleaning

Park,

Jeon,

Liu

et al. 2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

As a trend of using colloidal and smaller ceria nanoparticles (CNPs) at the shallow trench isolation (STI) chemical mechanical polishing (CMP) in semiconductor manufacturing, post-CMP cleaning challenges in the removal of residual CNPs on the SiO2 film surface became much more challenging.We investigated the reduction/oxidation of ceria nanoparticles (CNPs) by hydrogen gas-dissolved water (H2 GDW), carbon dioxide gas-dissolved water (CO2 GDW), and oxygen gas-dissolved water (O2 GDW). The concentration of Ce3+ on the CNPs changed from 18.64% to 19.48%, 20.31% to 21.94%, and 21.27% to 19.22%, respectively, after immersion in H2 GDW, CO2 GDW, and O2 GDW for 3 to 12 h. Following the Ce3+ concentration of the CNP surface, adhesion energies between CNPs immersed in H2 GDW, CO2 GDW, and O2 GDW for 6 hours with SiO2 surface were 6.06E-16 J, 6.18E-16 J, and 4.83E-16 J. Cleaning experiments under megasonic conditions revealed the efficacy of H2 GDW and O2 GDW in removing residual CNPs from SiO2 surfaces. The residual cerium (Ce) ion concentrations remaining on the SiO2 film surface after cleaning, were 0.06, 0.41, and 0.10 ppb for H2 GDW, CO2 GDW, and O2 GDW, respectively.

show abstract

Section: Resultsmentioning

confidence: 99%

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO₂ Film Surface in Post-CMP Cleaning

Park,

Jeon,

Liu

et al. 2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

Spatially Selective Ultraprecision Polishing and Cleaning by Collective Behavior of Micro Spinbots

Je,

Won,

Wie

et al. 2024

Small Structures

View full text Add to dashboard Cite

Untethered magnetic actuation is an attractive technique for controlling a batch of micrometer‐sized soft robots. Recent advancements have enabled each robot to follow its path independently using a single magnetic device. However, applications of magnetic soft microrobots are mostly biased toward the biomedical field. In this study, thermoplastic polyurethane–Fe3O4 nanocomposite soft spinning microrobots, that is, spinbots that actuate on a tabletop magnetic stirrer, were utilized as innovative precision manufacturing tools for spatially selective precision polishing and cleaning. The pivot motion of the revolving spinbots, which involves repetitive sweeping during rotation cycles, is explored. This sweeping action physically removes nanometer‐sized surface contaminants from the workpiece, achieving a cleaning efficiency of 99.6%. Multiple spinbots, up to 42 in total, simultaneously operated along their own orbital pathways on three vertically stacked wafers, thereby demonstrating an unprecedented cleaning method. In addition, the spinbots precisely removed materials from the workpiece using a three‐body abrasion mechanism. Furthermore, the spinbots contributed to precise material removal, resulting in remarkable surface polishing (R a ≈ 1.8 nm). This novel polishing system, which uses the collective behavior of multiple spinbots on a tabletop magnetic stirrer, is 1000‐fold lighter than current state‐of‐the‐art equipment aimed at achieving similar levels of fine finishing.

show abstract

Benzethonium chloride as a tungsten corrosion inhibitor in neutral and alkaline media for the post-chemical mechanical planarization application

Meethal

Jalalzai

Muskan

et al. 2023

Journal of Colloid and Interface Science

View full text Add to dashboard Cite

Particle Removal by Surfactants During Semiconductor Cleaning

Cited by 4 publications

References 62 publications

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO₂ Film Surface in Post-CMP Cleaning

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO₂ Film Surface in Post-CMP Cleaning

Spatially Selective Ultraprecision Polishing and Cleaning by Collective Behavior of Micro Spinbots

Benzethonium chloride as a tungsten corrosion inhibitor in neutral and alkaline media for the post-chemical mechanical planarization application

Contact Info

Product

Resources

About

Particle Removal by Surfactants During Semiconductor Cleaning

Cited by 4 publications

References 62 publications

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO2 Film Surface in Post-CMP Cleaning

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO2 Film Surface in Post-CMP Cleaning

Spatially Selective Ultraprecision Polishing and Cleaning by Collective Behavior of Micro Spinbots

Benzethonium chloride as a tungsten corrosion inhibitor in neutral and alkaline media for the post-chemical mechanical planarization application

Contact Info

Product

Resources

About

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO₂ Film Surface in Post-CMP Cleaning

Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO₂ Film Surface in Post-CMP Cleaning