Particle Surface Layer Characterization Using Ion Beam Analysis.

Berning, Paul R.; Niiler, A.

doi:10.21236/ada313848

Cited by 1 publication

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“…A random thickness distribution is usually called layer roughness, and it has been already demonstrated that roughness parameters (such as the layer thickness variation) can be measured with IBA methods [3]. The possibility to derive the layer thickness distribution in general cases was already shown in [4,5,6,7,8,9,10,11].…”

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confidence: 99%

Layer morphology analysis of sputter-eroded silicon gratings using Rutherford backscattering

Langhuth

Mayer

Lindig

2011

Nuclear Instruments and Methods in Physics Research Section B:

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The possibility to simulate Rutherford backscattering (RBS) spectra from arbitrary laterally inhomogeneous sample structures was implemented in the SIMNRA code.Layer morphology is modeled by a layer thickness frequency distribution. This method was used to monitor the evolution of the surface morphology of a one dimensional silicon grating on top of a tantalum interlayer in situ. The Si grating was sputtered by argon and carbon ion beams at an incident energy of 6 keV at two different angles of incidence parallel to the grid lines. After each sputtering step the surface was investigated by RBS. The Si grid lines undergo a change of their morphology due to sputtering erosion. The morphology change depends on the sputtering angle and is different for Ar and C bombardment. Sputtering with C leads to the formation of a protective C layer on top, which was confirmed by additional NRA measurements. The results of the RBS measurements were confirmed by scanning electron micrographs of sample cross-sections produced by focused ion beam cross-sectioning.

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