Particulate Surface Contamination and Device Failures

Monkowski, J.

doi:10.1007/978-1-4684-9126-5_6

Cited by 8 publications

(3 citation statements)

References 20 publications

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“…Particles that are present during film growth or deposition may lead to pinholes, material voids, cracks, and the generation of defects noted above, depending on their chemical composition. Additional information on the nature, origin, detection, and effects of contaminants is available from selected papers and reviews (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13).…”

Section: Type Origin and Effects Of Contaminantsmentioning

confidence: 99%

“…With the advent of reactive physical vapor deposition techniques (5)(6)(7)(8), where a discharge in nitrogen is created with titanium atoms either evaporated or sputtered from one electrode, low temperature depositions (<500~ became possible and applications of TiN coatings have become even more widespread. Other applications have been as a transparent heat mirror for architectural windows (9,10), and as a high temperature diffusion barrier for silicon solar cells (11,12).…”

Section: Growth and Properties Of Lpcvd Titanium Nitride As A Diffusi...mentioning

confidence: 99%

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The Evolution of Silicon Wafer Cleaning Technology

Kern

1990

J. Electrochem. Soc.

1,521

801

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The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implementation with optimized equipment: from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles. Improvements in wafer drying by use of isopropanol vapor or by "slow-pull" out of hot deionized water are being investigated. Several alternative cleaning methods are also being tested, including choline solutions, chemical vapor etching, and UV/ozone treatments. The evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989.

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Section: Type Origin and Effects Of Contaminantsmentioning

confidence: 99%

Section: Growth and Properties Of Lpcvd Titanium Nitride As A Diffusi...mentioning

confidence: 99%

The Evolution of Silicon Wafer Cleaning Technology

Kern

1990

J. Electrochem. Soc.

1,521

801

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“…Notation found in electronic grade gases, however, which leads to considb = thickness of silicon consumed/thickness of glass produced, Eq, erable difficulty in maintaining run-to-run uniformity (Monkowski, 1987). It is preferred in industry, therefore, to blend in controlled quantities of water vapor in order to enhance process reproducibility.…”

Section: S U Rn Rn a R Ymentioning

confidence: 99%

Mathematical modeling of boron diffusion from boron oxide glass film sources

Yeckel

Middleman

1988

AIChE Journal

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Mathematical models are developed to examine two alternative means of boron doping from boron-rich glass films. For the planar source diffusion system, in which boron diffusion and glass film growth occur simultaneously at high temperature (900-1 ,2OO"C), glass film growth rates and the degree of doping achieved are predicted. In most cases, the solubility limit of boron in silicon is attained at the silicon surface. It is found that depletion of the boron source wafers used in this process may be slowed considerably by their removal from the reactor after a short time. Model predictions for an alternative method, in which the glass film is pregrown at low temperature (300°C) and the diffusion subsequently performed at high temperature, demonstrate a strong dependence of the boron surface concentration on the initial boron content in the pregrown glass film, for concentrations of boron near the solubility limit. The conditions for which a masking film of SiO, is insufficient to prevent boron diffusion into silicon, known as mask failure, are also predicted by the models.

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Grinding, Edge Grinding, Etching, and Surface Cleaning

2021

Wafer Manufacturing

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Particulate Surface Contamination and Device Failures

Cited by 8 publications

References 20 publications

The Evolution of Silicon Wafer Cleaning Technology

The Evolution of Silicon Wafer Cleaning Technology

Mathematical modeling of boron diffusion from boron oxide glass film sources

Grinding, Edge Grinding, Etching, and Surface Cleaning

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