2013
DOI: 10.1002/cvde.201304321
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Parylene AF‐4 via the Trapping of a Phenoxy Leaving Group

Abstract: A unique method of depositing parylene AF‐4 via the cleavage and trapping of a phenoxy leaving group is presented. The leaving group is non‐corrosive and the synthetic routes can be readily scalable. The method presented only works with parylene AF‐4 because its threshold temperature (∼30°C) is lower than the melting point of the phenoxy radical (∼40°C). This method may prove to be a viable route for low‐cost deposition of parylene AF‐4 and its widespread use as a conformal coating where superior UV and oxidat… Show more

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Cited by 5 publications
(5 citation statements)
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“…For the deposition of thin film AF4 parylene coatings, vapor deposition polymerization (VDP) based on the Gorham process is used since it produces homogenous films and covers small holes and edges very well. The VDP process seen in Figure 1b needs solid dimers, which become sublimated over 100 • C. This vapor is then pyrolyzed over 600 • C and only fluorinated monomers are left for the final step, where the polymerization of AF4 takes place on the substrate material at room temperature [1,18,20,21]. Since parylene AF4 offers such outstanding properties, research was conducted on using it as a dielectric barrier coating for MEMS applications [22][23][24].…”
Section: Introductionmentioning
confidence: 99%
“…For the deposition of thin film AF4 parylene coatings, vapor deposition polymerization (VDP) based on the Gorham process is used since it produces homogenous films and covers small holes and edges very well. The VDP process seen in Figure 1b needs solid dimers, which become sublimated over 100 • C. This vapor is then pyrolyzed over 600 • C and only fluorinated monomers are left for the final step, where the polymerization of AF4 takes place on the substrate material at room temperature [1,18,20,21]. Since parylene AF4 offers such outstanding properties, research was conducted on using it as a dielectric barrier coating for MEMS applications [22][23][24].…”
Section: Introductionmentioning
confidence: 99%
“…It is produced by chemical vapour deposition (CVD) via the Gorham method [4]. The problem though is a very high precursor cost [5,6]. Materials which are currently used as precursors are shown in figure 1.…”
Section: Introductionmentioning
confidence: 99%
“…Octafluoro [2.2]paracyclophane (1), the precursor for parylene AF-4, is 75 times the cost of [2.2]paracyclophane, the precursor for parylene N, with a single-source supplier (Yuan-Shin Materials Technology Corp. Ltd, Kaohsiung, Taiwan). Although progress has been made, the difficulty with this synthesis is that it requires a total of three steps and the last one is not scalable and of low yield [6][7][8]. An alternative route to parylene AF-4 is to start with one of the intermediate synthetic products 1,4-bis(bromodifluoromethyl)benzene (2) as the CVD precursor [9].…”
Section: Introductionmentioning
confidence: 99%
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“…On Parylene VT‐4 instead, no works as electret material exist in the literature. Parylene AF‐4 and VT‐4 are highly compliant, MEMS‐compatible and present excellent thermal and dielectric properties with high dielectric strength, which make them potential candidates for energy harvesting applications …”
Section: Introductionmentioning
confidence: 99%