Passivating defects in ZnO electron transport layer for enhancing performance of red InP-based quantum dot light-emitting diodes

Ning, Meijing; Zhao, Ke; Zhao, Lijia; Cao, Sheng; Zhao, Jialong; Gao, Yonghui; Yuan, Xi

doi:10.1016/j.materresbull.2023.112589

Cited by 4 publications

(1 citation statement)

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“…The QLED with a 110-nm-thick ZnMgO NP ETL exhibited a peak EQE of 17.0%. Moreover, several groups have developed high-efficiency QLEDs by employing a core-shell structure with ZnMgO as the ETL to passivate defects in ZnO NPs, thereby increasing the Mg concentration in the shell layer [30][31][32]. Rather than focusing on direct contact between QDs and ZnO NPs, extensive study is currently underway regarding direct contact between QDs and ZnMgO NPs.…”

Section: Introductionmentioning

confidence: 99%

Thickness Optimization of Zn0.9Mg0.1O Nanoparticle Electron Transport Layer for High-Performance Top-Emission Quantum Dot Light-Emitting Diodes

Jang,

Yang,

Kim

et al. 2023

Preprint

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Zn0.9Mg0.1O nanoparticle (NP) were employed as electron transport layers (ETLs) with varying thicknesses to investigate their influence on the efficiency of the top-emission quantum dot light-emitting diodes (TE-QLEDs) fabricated inside the bank. An increase in the thickness of the Zn0.9Mg0.1O NP ETL led to a decrease in the concentration of oxygen vacancies, reducing the conductivity of the Zn0.9Mg0.1O and resulting in lower current density in the TE-QLEDs. The decrease in conductivity of Zn0.9Mg0.1O NP ETL was confirmed through electron-only device (EOD) characterization. Furthermore, it was noted that when the thickness of Zn0.9Mg0.1O NP ETL was 30 nm, the concentration of hydroxyl species reached its minimum. By minimizing the presence of hydroxyl species, exciton quenching at the quantum dot (QD) and Zn0.9Mg0.1O NP ETL interface was minimized, enhancing charge balance within the QD, significantly improving the efficiency of QLED. We successfully demonstrated that TE-QLED with a 30 nm-thick Zn0.9Mg0.1O NP ETL exhibits outstanding performance, achieving a maximum current efficiency of 91.92 cd/A and a maximum external quantum efficiency of 21.66%. These results suggest that Zn0.9Mg0.1O NP ETL, when tailored to an appropriate thickness, can serve as an ETL for TE-QLEDs, effectively suppressing exciton quenching and enhancing the charge balance in the TE-QLEDs.

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Section: Introductionmentioning

confidence: 99%