Passivating Detrimental DX Centers in CH3NH3PbI3 for Reducing Nonradiative Recombination and Elongating Carrier Lifetime

Wang, Jing; Li, W.; Yin, Wan‐Jian

doi:10.1002/adma.201906115

Cited by 64 publications

(58 citation statements)

References 66 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, Wang et al 54 found that the structural and electronic characteristics of VI − in MAPbI3 are similar to the DX in tetrahedral semiconductor, which is a harmful defect caused by a large atomic displacement, as shown in Fig. 4d-f.…”

Section: Point Defects Passivationmentioning

confidence: 87%

Recent Progress in Defect Tolerance and Defect Passivation in Halide Perovskite Solar Cells

Yin¹,

Guo²,

Chen³

et al. 2020

Acta Physico Chimica Sinica

View full text Add to dashboard Cite

In less than a decade, metal halide perovskites (MHPs) have been demonstrated as promising solar cell materials because the photoelectric conversion efficiency (PCE) of the representative material CH3NH3PbI3 rapidly increased from 3.8% in 2009 to 25.2% in 2009. However, defects play crucial roles in the rapid development of perovskite solar cells (PSCs) because they can influence the photovoltaic parameters of PSCs, such as the open circuit voltage, short-circuit current density, fill factor, and PCE. Among a series of superior optoelectronic properties, defect tolerance, i.e., the dominate defects are shallow and do not act as strong nonradiative recombination centers, is considered to be a unique property of MHPs, which is responsible for its surprisingly high PCE. Currently, the growth of PCE has gradually slowed, which is due to low concentrations of deep detrimental defects that can influence the performances of PSCs. To further improve the PCE and stability of PSCs, it is necessary to eliminate the impact of these minor detrimental defects in perovskites, including point defects, grain boundaries (GBs), surfaces, and interfaces, because nonradiative recombination centers seriously affect device performance, such as carrier generation and transport. Owing to its defect tolerance, most intrinsic point defects, such as VI and VMA, form shallow level traps in CH3NH3PbI3. The structural and electronic characteristics of the charged point defect VI − are similar to those of the unknown donor center in a tetrahedral semiconductor. It is a harmful defect caused by a large atomic displacement and can be passivated to strengthen chemical bonds and prevent atom migration by the addition of Br atoms. Owing to the ionic nature of MHPs and high ion migration speed, there are a large number of deep detrimental defects that can migrate to the interfaces under an electric field and influence the performance of PSCs. In addition, the ionic nature of MHPs results in surface/interface dangling bonds terminated with cations or anions; thus, deep defects can be passivated through Coulomb interactions between charged ions and passivators. Hence, the de-active deep-level traps resulting from charged defects can be passivated via coordinate bonding or ionic bonding. Usually, surface-terminated anions or cations can be passivated by corresponding cations or anions through ionic bonding, and Lewis acids or bases can be passivated through coordinated bonding. In this review, we not only briefly summarize recent research progress in defect tolerance, including the soft phonon mode and polaron effect, but also strategies for defect passivation, including ionic bonding with cations or anions and coordinated bonding with Lewis acids or bases.

show abstract

Section: Point Defects Passivationmentioning

confidence: 87%

Recent Progress in Defect Tolerance and Defect Passivation in Halide Perovskite Solar Cells

Yin¹,

Guo²,

Chen³

et al. 2020

Acta Physico Chimica Sinica

View full text Add to dashboard Cite

show abstract

“…Some researchers believe that the iodine vacancies (V I ) are shallow donors, [56,57,59] but Agiorgousis and a recent study by Wang et al revealed that V I formed deep-level traps by inducing the generation of lead dimers. [60][61][62] Iodine interstitial (I i ) defects were identified as shallow acceptor in the studies of Yin et al [56] In contrast, the further calculation by Du's et al showed that among all point defects, only the I i was deep carrier traps and non-radiative recombination centers. [63,64] Similar discrepancies also occurred in the Pb interstitial (Pb i ) and the two anti-site defects I MA and Pb MA .…”

Section: Intrinsic Point Defectsmentioning

confidence: 99%

Origin, Influence, and Countermeasures of Defects in Perovskite Solar Cells

Lei

Wang

et al. 2021

Small

View full text Add to dashboard Cite

Defects are considered to be one of the most significant factors that compromise the power conversion efficiencies and long‐term stability of perovskite solar cells. Therefore, it is urgent to have a profound understanding of their formation and influence mechanism, so as to take corresponding measures to suppress or even completely eliminate their adverse effects on device performance. Herein, the possible origins of the defects in metal halide perovskite films and their impacts on the device performance are analyzed, and then various methods to reduce defect density are introduced in detail. Starting from the internal and interfacial aspects of the metal halide perovskite films, several ways to improve device performance and long‐term stability including additive engineering, surface passivation, and other physical treatments (annealing engineering), etc., are further elaborated. Finally, the further understanding of defects and the development trend of passivation strategies are prospected.

show abstract

“…Small DE g (less than 0.10 eV) does not have a significant impact on the optical properties and could facilitate electron-hole separation to avoid fast recombination, leading to longer carrier lifetime. For example, the recombination rate of photogenerated electrons and holes slowed down in hybrid organicinorganic perovskite CH 3 NH 3 PbI 3 because of the phonon-assisted process in indirect bandgap [66,67].…”

Section: Electronic and Optical Propertiesmentioning

confidence: 99%

High-throughput computational screening of oxide double perovskites for optoelectronic and photocatalysis applications

Jiang

Yin

2021

Journal of Energy Chemistry

Self Cite

View full text Add to dashboard Cite

Passivating Detrimental DX Centers in CH₃NH₃PbI₃ for Reducing Nonradiative Recombination and Elongating Carrier Lifetime

Cited by 64 publications

References 66 publications

Recent Progress in Defect Tolerance and Defect Passivation in Halide Perovskite Solar Cells

Recent Progress in Defect Tolerance and Defect Passivation in Halide Perovskite Solar Cells

Origin, Influence, and Countermeasures of Defects in Perovskite Solar Cells

High-throughput computational screening of oxide double perovskites for optoelectronic and photocatalysis applications

Contact Info

Product

Resources

About