Passivation and Etching of Wafer Surfaces in HF–H<sub>2</sub>O<sub>2</sub>–IPA Solutions

Eom, Dae-Hong; Kim, Ky-Sub; Park, Jin-Goo

doi:10.1143/jjap.41.5881

Cited by 19 publications

(10 citation statements)

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“…A solution of HOOH + HF does not etch Si at an appreciable rate, much less than 0.01 nm s À1 at the concentrations used in this study [46,47]. However, HOOH + HF is the most commonly used solution for MAE.…”

Section: Introductionmentioning

confidence: 83%

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Kołasiński

Barclay

Sun

et al. 2015

Electrochimica Acta

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Section: Introductionmentioning

confidence: 83%

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Kołasiński

Barclay

Sun

et al. 2015

Electrochimica Acta

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“…Thus, with respect to thermodynamics, H 2 O 2 should be an even better oxidant for Si than HNO 3 . However, in the sparse literature data a very moderate reactivity of HF-H 2 O 2 mixtures toward boron-doped Si is reported, e.g., indicated by the low etch rates of <0.2 nm min –1 mentioned by Ohmi et al and Eom et al , NO 3 − ( aq ) + 4 normalH + ( aq ) ⇌ NO ( g ) + 2 normalH 2 O ( l ) + 3 normalh VB + H 2 O 2 false( aq false) + 2 H + false( aq false) ⇌ 2 H 2 normalO false( normal l false) + 2 h VB + normalH 2 normalO 2 ( aq ) ⇌ HO − …”

Section: Introductionmentioning

confidence: 99%

“…Thus, with respect to thermodynamics, H 2 O 2 should be an even better oxidant for Si than HNO 3 . However, in the sparse literature data a very moderate reactivity of HF-H 2 O 2 mixtures toward boron-doped Si is reported, e.g., indicated by the low etch rates of <0.2 nm min −1 mentioned by Ohmi et al and Eom et al 22,23 Table 1. Standard Redox Potential (E 0 ), Gibbs Energy (Δ R G 0 (298 K) ), and Standard Enthalpy of Reaction (Δ R H 0 (298 K) ) of Reactions in Equations 3 to 6…”

Section: ■ Introductionmentioning

confidence: 99%

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Gondek

Lippold

Röver³

et al. 2014

J. Phys. Chem. C

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In semiconductor and photovoltaic industries numerous process steps deal with etching and silicon surface modification. The present study focuses on the reactivity of HF-H2O2-based mixtures toward silicon surfaces in a wide range of concentrations. The generally very moderate reactivity is investigated regarding kinetic aspects and the silicon dissolution reactions. The activation energy of silicon dissolution in HF-H2O2 mixtures is determined to be ∼50 kJ/mol, which supports a surface reaction controlled mechanism. This interpretation is checked by oxidation experiments of Si surfaces with HF-free H2O2 solutions. Resulting silicon surfaces were characterized by means of diffuse reflection Fourier transform infrared spectroscopy and photoelectron spectroscopy. Surface properties give hints for an “electrochemical” silicon oxidation. Furthermore, the oxidation behavior of different H2O2 solutions is compared to that of HNO3 solutions. All results suggest kinetically limited silicon dissolution in HF-H2O2 mixtures and hole injection into the silicon surface to be the rate-determining part of the reaction process.

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“…The etch rate in aqueous KOH solutions is found to be dependent on the solution and additives therein. , The surface morphology of Si-(111) also changes under different etching conditions: additives and time have a significant influence on the pit morphology observed on the surface after etching . In order to influence the silicon etching process, the use of numerous additives, such as pyrocatechol and ethylene diamine, hydrogen peroxide, and etchants, such as TMAH, , NH 4 OH, , KOH, and hydrazine, have been reported in the literature. One of the most commonly used additives for KOH etching is isopropanol .…”

Section: Introductionmentioning

confidence: 99%

Influence of Additives on Alkaline Etching of Silicon(111)

Shah

Koekkoek

Enckevort

et al. 2009

Crystal Growth & Design

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Apart from temperature and alkaline concentration, the surface morphology of silicon surfaces after wet chemical etching is also profoundly influenced by the presence of additives in the etchant solution. In this study, the influence of several organic (aprotic, protic, and ionic) additives on the density and shape of etch pits on etched Si-(111) surfaces is investigated using optical microscopy and the Lichtfigur technique. For all the additives used, the number density of the pits increases by 1-3 orders of magnitude. The triangularity of the pit shape, expressed by a dimensionless number, R ab , increases substantially as well. These alterations are attributed to local desolvation of reaction products by the organic additives in a thin "surfactant" layer in the vicinity of the silicon surface. Chemisorption of additive molecules does not play a role in this process.

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Passivation and Etching of Wafer Surfaces in HF–H₂O₂–IPA Solutions

Cited by 19 publications

References 1 publication

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations

Influence of Additives on Alkaline Etching of Silicon(111)

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Passivation and Etching of Wafer Surfaces in HF–H2O2–IPA Solutions

Cited by 19 publications

References 1 publication

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Etching Silicon with HF-H2O2-Based Mixtures: Reactivity Studies and Surface Investigations

Influence of Additives on Alkaline Etching of Silicon(111)

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Product

Resources

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Passivation and Etching of Wafer Surfaces in HF–H₂O₂–IPA Solutions

Etching Silicon with HF-H₂O₂-Based Mixtures: Reactivity Studies and Surface Investigations