Passivation des semiconducteurs III-V

Viktorovitch, P.

doi:10.1051/rphysap:01990002509089500

Cited by 29 publications

(6 citation statements)

References 61 publications

(49 reference statements)

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“…On the same figure the curve through the points above the experimental interface state density curve represents the position over all the gap of the capacitance of the space charge of the semiconductor. This means that the pinning of the Fermi level was pratically suppressed (the pinning of the Fermi level occurs when qN ss is greater than the capacitance of the space charge region of the semiconductor [13]). These results are comparable with those obtained in the work of Poliakov (deposition of amorphous silicon carbide) [14] and close to the data of Basu who reported densities below 1 × 10 11 cm −2 eV −1 [15] with anodic oxide on GaSb.…”

Section: Discussionmentioning

confidence: 99%

Improved photoluminescence from electrochemically passivated GaSb

Salesse¹,

Alabédra²,

Chen³

et al. 1997

Semicond. Sci. Technol.

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A new class of insulating and passivating layers on gallium antimonide has been prepared by means of an electrochemical process. In previous work we used this new process of fabrication of passivating and insulating layers for gating devices made from GaSb/InAs/GaSb nanostructures (Chen Y et al 1994 Superlatt. Microstruct. 15 41 and Chen Y 1995 PhD Thesis Hertford College, Oxford, UK). In this publication we describe the effects of the electrochemical process leading to an improvement of the photoluminescence (PL) after the growth of the passivating layer on GaSb. The PL measurements on 100 , 111A and 111B GaSb substrates and on GaSb epilayers grown by MOVPE on GaAs indicate significant improvement of the PL intensity even after 12 months. Similar results have been observed on InGaSb/GaSb superlattice structures.

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Section: Discussionmentioning

confidence: 99%

Improved photoluminescence from electrochemically passivated GaSb

Salesse¹,

Alabédra²,

Chen³

et al. 1997

Semicond. Sci. Technol.

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“…Below 5.10 3 cm/s and, beyond 2.10 6 cm/s, the recombinations at surface have practically no influence on the quantum efficiency. This phenomenon is related to the fact that the recombination effect at surface is less preponderant on the recombination effect in volume, whose recombination velocity is of the order of Dn/Ln [3]. This result gives us information about the possible limits of the recombination velocities at surface and at interface for these models of devices.…”

Section: Influence Of the Electron Recombinationmentioning

confidence: 90%

“…Very promising prospects offer, to these semiconductors, particularly GaSb, GaInSb, GaAlSb and associated materials, because of their outstanding intrinsic properties. They are in fact endowed a high electronic mobility and, often, a direct bandgap energy [3] making them components of choice for optoelectronic devices. In some of earth observation satellites from space, imaging in the infrared band medium allows monitoring the spread of wetlands, desertification and maturity of crops.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect

Dia¹

2017

IJMSA

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Abstract:The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78µm to 2,6µm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga 1-x In x Sb, Ga 1-y Al y Sb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.

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“…Nevertheless, their use in electronic devices such as metalinsulator-semiconductor field effect transistors (MISFETs) is limited by the difficulty in forming high-quality insulating thin films on their surface. III-V native oxides are generally chemically inhomogeneous and give insulator semiconductor interfaces with poor electrical properties (1). This is unlike the case of silicon, where oxidation at the surface of the material can be controlled precisely so as to produce an insulating layer of amorphous silica with convenient electronic properties.…”

Section: Introductionmentioning

confidence: 99%

“…In previous works, we coated aluminum phosphate thin films on silicon substrates (6)(7)(8); now, we are working on the synthesis of gallium phosphate thin films on Si and GaAs substrates. Gallium phosphate, which exhibits good dielec- 1 To whom correspondence should be addressed. tric properties, seems to be a good candidate for passivating III-V semiconductors such as GaAs, by use of a lowtemperature deposition method, the ''pyrosol'' process.…”

Section: Introductionmentioning

confidence: 99%