Passivation Effect during the C4F8 + N2 Etch Process for SiOCH Low-k Films

Yang, Seung-Kook; Kim, Han-Hyoung; Yoo, Han-Seok; Beom‐Hoan, O; Lee, Seung‐Gol; Lee, El-Hang; Park, Se-Geun; Chang, Sung‐Pil; Lee, Jong-Geun; Song, Hoyoung

doi:10.3938/jkps.52.1786

Cited by 3 publications

(1 citation statement)

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“…Under these states, the reliability of the device is affected when either a metal plug with an oxidized surface is deposited into contact and via holes or when a silicon substrate is oxidized because of the increased contact resistivity and dopant loss due to severe silicon loss at the ultra-shallow junction caused by oxidation [1][2][3]. In back-end-of-line (BEOL) processing, when SiOCH-based low-k dielectric materials are exposed to O 2 plasma, the k-value (permittivity) is enhanced due to the formation of oxygen bonds with methyl groups, which results in porosity [4][5][6]. Therefore, research on a range of gas chemistries is currently underway to solve the issues involving oxidation and the low-k dielectric material damage during the ashing process.…”

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confidence: 99%

Hydrogen Plasma Characteristics for Photoresist Stripping Process in a Cylindrical Inductively Coupled Plasma

Yang¹,

Cho²,

Lee³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a 120 Φ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the V rms and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of H 2 gas in mixed H 2 /N 2 plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing H 2 gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

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