Passivation Layer of CdZnTe as Studied by Spectroscopic Ellipsometry

Teng, Jianyong; Sang, Wenbin; Lu, Yue; Lou, Yanyan; Min, Jiahua; Liang, Xiaoyan; Qin, Kaifeng; Yue, Qian

doi:10.3938/jkps.53.2873

Cited by 4 publications

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Photoluminescence evaluation of the quality of Cd_0.9Zn_0.1Te detectors doped with different indium concentrations

Naseka

Strilchuk

Komar

et al. 2011

Physica Status Solidi (b)

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With the aim to determine an optimal indium (In) concentration in Cd 0.9 Zn 0.1 Te:In nuclear radiation detectors for a good material quality, low-temperature photoluminescence (LTPL) measurements have been performed at 5 K in the energy range of 1.2-1.7 eV. The LTPL spectrum of initial sample contained a neutral acceptor bound exciton (A 0 X) peak at 1.635 eV, donoracceptor pair (DAP) peak at 1.606 eV with its 1LO phonon replica, and deep-level defects (D) peak at 1.455 eV. In doping leads to the appearance of a new relatively intensive peak at 1.652 eV that is caused by a shallow neutral donor bound exciton (D 0 X) due to In substituting cadmium vacancies (V Cd ). At In concentrations of about 8 Â 10 16 -10 17 cm À3 the value of I D 0 X =I D ratio is maximal, which indicates a low density of detrimental carrier traps and, therefore, high-material quality.We believe that at such concentrations the majority of as-grown Cd vacancies will be substituted by In atoms and, therefore, noted concentrations are optimal, which was confirmed by the correlation with mobility-lifetime product.

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Photoluminescence evaluation of the quality of Cd_0.9Zn_0.1Te detectors doped with different indium concentrations

Naseka

Strilchuk

Komar

et al. 2011

Physica Status Solidi (b)

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Observation of In-related collective spontaneous emission (superfluorescence) in Cd_0.8Zn_0.2Te:In crystal

Ding

Qiu

et al. 2012

Appl. Phys. Lett.

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Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd_1−xZn_xTe ternary alloys

Talwar¹,

Feng²,

Lee³

et al. 2014

Mater. Res. Express

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Passivation Layer of CdZnTe as Studied by Spectroscopic Ellipsometry

Cited by 4 publications

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Photoluminescence evaluation of the quality of Cd_0.9Zn_0.1Te detectors doped with different indium concentrations

Photoluminescence evaluation of the quality of Cd_0.9Zn_0.1Te detectors doped with different indium concentrations

Observation of In-related collective spontaneous emission (superfluorescence) in Cd_0.8Zn_0.2Te:In crystal

Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd_1−xZn_xTe ternary alloys

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Passivation Layer of CdZnTe as Studied by Spectroscopic Ellipsometry

Cited by 4 publications

References 0 publications

Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations

Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations

Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.2Te:In crystal

Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd1−xZnxTe ternary alloys

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Photoluminescence evaluation of the quality of Cd_0.9Zn_0.1Te detectors doped with different indium concentrations

Photoluminescence evaluation of the quality of Cd_0.9Zn_0.1Te detectors doped with different indium concentrations

Observation of In-related collective spontaneous emission (superfluorescence) in Cd_0.8Zn_0.2Te:In crystal

Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd_1−xZn_xTe ternary alloys