Passivation of Crystalline Silicon Wafers by Ultrathin Oxide Layers: Comparison of Wet-chemical, Plasma and Thermal Oxidation Techniques

Stegemann, Bert; Balamou, Patrice; Lussky, Thomas; Gad, Karim M.; Vossing, Daniel; Käsemann, Martin

doi:10.1109/pvsc.2018.8548154

Cited by 6 publications

(5 citation statements)

References 7 publications

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“…This parameter, which in our case is an energetic distribution of surface states (D st (E)), can be compared to the combination of the defect peak density and defect layer thickness parameters used in the simulation. The value of D st (E) calculated through the parameters extracted from the simulation are in agreement with the values found in the literature for Si surface with native oxide [9].…”

Section: Spv As a Function Of Illumination Intensitysupporting

confidence: 88%

“…Qualitative values of defects peak density, energy width, energy position and defect layer thickness can be obtained from the simulation parameters used. From the literature the surface band bending can be linked to the parameter of energetic distributions of interface states D it (E) [9]. This parameter, which in our case is an energetic distribution of surface states (D st (E)), can be compared to the combination of the defect peak density and defect layer thickness parameters used in the simulation.…”

Section: Spv As a Function Of Illumination Intensitymentioning

confidence: 99%

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KPFM surface photovoltage measurement and numerical simulation

et al. 2019

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A method for the analysis of Kelvin probe force microscopy (KPFM) characterization of semiconductor devices is presented. It enables evaluation of the influence of defective surface layers. The model is validated by analysing experimental KPFM measurements on crystalline silicon samples of contact potential difference (VCPD) in the dark and under illumination, and hence the surface photovoltage (SPV). It is shown that the model phenomenologically explains the observed KPFM measurements. It reproduces the magnitude of SPV characterization as a function of incident light power in terms of a defect density assuming Gaussian defect distribution in the semiconductor bandgap. This allows an estimation of defect densities in surface layers of semiconductors and therefore increased exploitation of KPFM data.

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Section: Spv As a Function Of Illumination Intensitysupporting

confidence: 88%

Section: Spv As a Function Of Illumination Intensitymentioning

confidence: 99%

KPFM surface photovoltage measurement and numerical simulation

et al. 2019

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“…Refs. 21,22,24,30,35,36,58,59) and (ii) hydrogen passivation by post-ALD-annealing in forming gas at temperatures below 450 o C (e.g. Refs.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, we have chosen 450 °C as the upper limit in this work, although it can be necessary to have an even lower limit depending on the applications. The photovoltaics sector has adopted the LT processing (<450 °C) for SiO x /Si, and is continuously developing the technology for front and rear passivation for Si solar cells. − HT treatments can change the doping profile of the cells, as well as it can increase the manufacturing costs, energy consumption, and the risk of bulk contamination in the silicon (e.g., via enhanced metal diffusion). LT passivation methods for SiO x /Si are essential not only for transistor and photovoltaic applications, but also for developing diverse Si-based technologies, including, e.g., biomedicine, photoelectrochemistry, photonics, sensors, and thin-film-transistors. − …”

Section: Introductionmentioning

confidence: 99%

“…In order to decrease the density of defect levels in SiO x /Si, various LT pretreatments and post-treatments have been investigated intensively for several decades. Two state-of-the-art LT methods are (i) chemical oxide growth before ALD (e.g., refs , , , , , , , and ) and (ii) hydrogen passivation by post-ALD-annealing in forming gas at temperatures below 450 °C (e.g., refs , , , , , , and ). Often these two methods are combined.…”

Section: Introductionmentioning

confidence: 99%

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Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Rad

Lehtiö

Mack

et al. 2020

ACS Appl. Mater. Interfaces

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Low-temperature (LT) passivation methods (< 450 o C) for decreasing defect densities in the material combination of silica (SiOx) and silicon (Si) are relevant to develop a diverse technology (e.g. electronics, photonics, medicine), where defects of SiOx/Si cause losses and malfunctions. Many device structures contain the SiOx/Si interface(s), of which defect densities cannot be decreased by the traditional, beneficial high temperature treatment (> 700 o C). Therefore, the LT passivation of SiOx/Si has been, since long, a research topic to improve applications performance. Here, we demonstrate that a LT (< 450 o C) ultrahigh-vacuum (UHV) treatment is a potential method that can be combined with current state-of-theart processes in a scalable way, to decrease the defect densities at the SiOx/Si interfaces. The studied LT-UHV approach includes a combination of wet chemistry followed by UHV-based heating and pre-oxidation of silicon surfaces. The controlled oxidation during the LT-UHV treatment is found to provide an until now not reported crystalline Si oxide phase. This crystalline SiOx phase can explain the observed decrease in the defect density by halve.Furthermore, the LT-UHV treatment can be applied in a complementary, post-treatment way to ready components to decrease electrical losses. The LT-UHV treatment has been found to decrease the detector leakage current by factor of two.

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