Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
DOI: 10.1109/iciprm.1997.600252
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Passivation of InP-based HBTs for high bit rate circuit applications

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Cited by 14 publications
(6 citation statements)
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“…[27][28][29][30][41][42][43][44][45] However, depending on the layer structure and fabrication process, the reported degree of the degradation can vary from less pronounced to very drastic. The increased leakage currents have often been attributed to the pinning of the surface Fermi level along the passivated surfaces.…”
Section: Film Properties Of Thermal-ald-al 2 O 3 and Plasma-ald-al mentioning
confidence: 96%
“…[27][28][29][30][41][42][43][44][45] However, depending on the layer structure and fabrication process, the reported degree of the degradation can vary from less pronounced to very drastic. The increased leakage currents have often been attributed to the pinning of the surface Fermi level along the passivated surfaces.…”
Section: Film Properties Of Thermal-ald-al 2 O 3 and Plasma-ald-al mentioning
confidence: 96%
“…We should notice that the tunneling factor at metallurgical junction (N E = 7xlO l6 cm-3 and N B = 2xlO l8 cm- 3 ) is Yn(volume) = 3.8. Also, when electrons tunnelig through conduction band spike is taken in account, the ideality factor remains the same as for ideal thermionic emission [9]~only V n is replaced with where IE is the emitter length (Fig.…”
Section: Ill Experimentsmentioning
confidence: 99%
“…INTRODUCTION The ideality factor, n of InP-based HBTs current-voltage characteristics is dependent on emitter orientation [1,2] and on type of passivation film used [3][4][5]. An accurate correlation between semiconductor surface changes induced by dielectric layer and the ideality factor of base current is hard to make.…”
mentioning
confidence: 99%
“…The device passivation and protection for InP HBTs rely on the dielectric films such as silicon nitride, silicon oxide or polyimide. For InP-based HBTs, polyimide was found to induce the least degradation as compared to SiN X and SiO 2 [4], and thus has been widely used for passivation and planarization of InP HBTs [5,6]. However, we have recently observed a current transient and current gain instabilities in InP/InGaAs HBTs induced by polyimide passivation layer [7].…”
Section: Introductionmentioning
confidence: 99%