Passivation of interfacial defects at III-V oxide interfaces

Lin, Liang; Robertson, John

doi:10.1116/1.4710513

Cited by 62 publications

(30 citation statements)

References 120 publications

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“…The results support theoretical studies that indicate that avoiding As-(sub)-oxides is critical for achieving low D it . [32][33][34] In particular, even for recipe A, the D it is already significantly lower than for other cleaning methods, 14 and this is likely due to combination of the absence of As-(sub)-oxides and the passivation properties of the AlO x N y interfacial layer.…”

Section: Resultsmentioning

confidence: 99%

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Chobpattana

Mates

Mitchell

et al. 2013

Journal of Applied Physics

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We report on the influence of variations in the process parameters of an in-situ surface cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.

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Section: Resultsmentioning

confidence: 99%

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Chobpattana

Mates

Mitchell

et al. 2013

Journal of Applied Physics

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“…Integration of high-k gate dielectrics with Ge and III-V semiconductors has proven extremely challenging due to the presence of persistent interfacial defects and traps. 54,55 Likewise, the transport properties of graphene have been shown to be particularly sensitive to defects and charge traps in the substrate material. 56,57 Despite numerous electrical-based measurements identifying a range of bulk and interfacial point defects and traps in low and high-k materials, [58][59][60][61][62][63][64][65][66][67][68][69][70] very little is still known about the actual chemical identity and structure of these defects.…”

Section: Introductionmentioning

confidence: 99%

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

French

King

2013

J. Mater. Res.

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The continuation of Moore's law requires new materials at both extremes of the dielectric permittivity spectrum and an increased understanding of the fundamental mechanisms limiting their electrical reliability. To address the latter, reflection electron energy loss spectroscopy has been utilized to measure the band gap of various oxide-based low and high dielectric constant (k) materials of interest to the semiconductor industry. In situ Ar 1 sputtering has been additionally utilized to simulate process-induced defect states that are believed to contribute to electrical leakage, time-dependent dielectric breakdown, charge trapping, and other fixed-charge reliability issues in nano-electronic devices. It is observed that Ar 1 sputtering predominantly generates surface oxygen vacancy defects in the upper portion of the band gap for both low and high-k dielectric materials. These results are in agreement with numerous theoretical investigations of defects in low and high-k dielectric materials and models for mechanisms that limit their reliability.

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“…8,15,47 This is also consistent with recent theoretical results. 11,48,49 III-V oxide interfaces have not received the amount of attention, particularly at the atomistic level, of the silicon-silicon oxide interfaces 26 or silicon-high k interfaces; 30 however, their increasing technological relevance is generating increased interest in these complex systems. Although there remain clear questions as to the specific nature of the atomic structures giving rise to the interface density of states with the bandgap of In 0.53 Ga 0.47 As/oxide interfaces, it appears that there are a variety of contributions and these contributions can potentially vary due to growth conditions.…”

Section: Discussionmentioning

confidence: 99%

First principles modeling of defects in the Al2O3/In0.53Ga0.47As system

Greene‐Diniz¹,

Kuhn

Hurley³

et al. 2017

Journal of Applied Physics

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Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point defects in bulk In0.53Ga0.47As and for models of the In0.53Ga0.47As/Al2O3 interface. The results are consistent with previous computational studies that AsGa antisites are candidates for defects observed in capacitance voltage measurements on metal-oxide-semiconductor capacitors, as the AsGa antisite introduces energy states near the valence band maximum and near the middle of the energy band gap. However, substantial broadening in the distribution of the GaAs charge transition levels due to the variation in the local chemical environment resulting from alloying on the cation (In/Ga) sublattice is found, whereas this effect is absent for AsGa antisites. Also, charge transition energy levels are found to vary based on proximity to the semiconductor/oxide interface. The combined effects of alloy-and proximity-shift on the GaAs antisite charge transition energies are consistent with the distribution of interface defect levels between the valence band edge and midgap as extracted from electrical characterization data. Hence, kinetic growth conditions leading to a high density of either GaAs or AsGa antisites near the In0.53Ga0.47As/Al2O3 interface are both consistent with defect energy levels at or below midgap.Hence the purpose of the calculations presented in this study is to narrow the possible set of atomistic configurations giving rise to defects levels in the band gap, and thereby motivate the development of growth conditions and processing steps that either passivate the defects or avoid their formation.Recent density functional theory (DFT) investigations of defects in related III-V (GaAs, InAs, and InGaAs alloys) materials have been reported. These studies provide predictions for the stability and amphoteric nature of native defects in bulk and oxide-terminated surface models using hybrid exchange-correlation (XC) functionals [10-14], with the hybrid functionals chosen to overcome the DFT band gap problem. In such approaches a fraction a of Hartree-Fock exchange is mixed into the XC functional (giving rise to a hybrid functional), and the value of a is usually adjusted to reproduce the experimental band gap. These authors [10][11][12][13][14] conclude that the position of the midgap charge transition levels (CTLs) of the AsGa antisite, combined with a predicted lower formation energy relative to other commonly studied point defects, , suggest that this antisite is responsible for the midgap Dit states observed in the capacitance-voltage (CV) response of In0.53Ga0.47As/high-k oxide MOS capacitors. In other works, studies of bonding mechanisms at the III-V/oxide interfaces GaAs/Al2O3 and GaAs/HfO2 have been presented [15], and predictions of charge transition levels (CTLs) of As and P vacancies at (110) oriented GaAs and InP surfaces are reported in ref. [16]. The latter utilizes many body perturbation theory (MBPT) to avoid the need to...

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Passivation of interfacial defects at III-V oxide interfaces

Cited by 62 publications

References 120 publications

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

First principles modeling of defects in the Al2O3/In0.53Ga0.47As system

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