2016
DOI: 10.1016/j.mee.2016.06.001
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Passivation of organic field effect transistor with photopatterned Parylene to improve environmental stability

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Cited by 22 publications
(22 citation statements)
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“…20 EG pnJs can be utilized to circumvent most of the technical difficulties resulting from the use of metallic contacts and multiple device interconnections. Research in developing materials for gating and preserving properties of large devices has seen limited success with amorphous boron nitride, [21][22] atomicallylayered high-k dielectrics, [23][24][25][26] Parylene, [27][28][29] and hexagonal boron nitride, [30][31] whereas other materials have been more successful, such as (poly)-methyl methacrylate ((P)MMA), ZEP520A photoresist, tetrafluoro-tetracyanoquinodimethane (F4TCNQ), and chromium tricarbonyl. 16,[32][33] For millimeter-scale constructions, one major issue was fabricating correspondingly large pnJs.…”
Section: Introductionmentioning
confidence: 99%
“…20 EG pnJs can be utilized to circumvent most of the technical difficulties resulting from the use of metallic contacts and multiple device interconnections. Research in developing materials for gating and preserving properties of large devices has seen limited success with amorphous boron nitride, [21][22] atomicallylayered high-k dielectrics, [23][24][25][26] Parylene, [27][28][29] and hexagonal boron nitride, [30][31] whereas other materials have been more successful, such as (poly)-methyl methacrylate ((P)MMA), ZEP520A photoresist, tetrafluoro-tetracyanoquinodimethane (F4TCNQ), and chromium tricarbonyl. 16,[32][33] For millimeter-scale constructions, one major issue was fabricating correspondingly large pnJs.…”
Section: Introductionmentioning
confidence: 99%
“…Particularly, unprotected organic electronic devices suffer from degradation because they are typically susceptible to the environmental factors present under ambient conditions. Thus, encapsulation is a necessary technique used to maintain the electrical functionality of these devices and to protect them from harsh environments …”
Section: Introductionmentioning
confidence: 99%
“…For comparing the results of the conducting polymer electrode based OTFT with conventional OTFT, devices with Pd source and drain electrode were also fabricated and patterned by lift-off process. Parylene C was employed for simultaneous passivation and patterning of Pentacene [30], as previously reported by our group. The schematic of the fabricated OTFT for studies on effect of electrodes is shown in Fig.…”
Section: Thin Film Transistor Fabricationmentioning
confidence: 99%
“…The OTFTs fabricated for realizing the flexible amplifiers in this study were passivated with Parylene C. The process of passivation also simultaneously patterned the semiconductor layer, which reduced the leakage current and increased the I on /I off ratio. The results of effect of passivation have been discussed in detail in [30]. The mobility of the Pentacene OTFT passivated with Parylene C remained constant during the period of study of four months.…”
Section: Otft Characteristicsmentioning
confidence: 99%