“…4b. The defect densities of perovskite films are calculated according to the formula: N t = 2e 0 e r V TFL /(qL 2 ), 42,43 where e 0 , e r , V TFL , q and L are the vacuum permittivity, the relative permittivity of the perovskite film, the trap-filled limited voltage, the basic charge and the thickness of the perovskite film, 26 respectively. As expected, the optimized device with DMITU has a lower density of defect states (3.5 Â 10 15 cm À3 ) than that of the control device (4.7 Â 10 15 cm À3 ), meaning that the DMITU facilitates the formation of excellent perovskite films, thereby reducing defect-assisted nonradiative recombination.…”