Passivation of poly-Si surface using vinyl and epoxy group additives for selective Si3N4 etching in H3PO4 solution

Park, Taegun; Kim, Taehyeon; Son, Changjin; Lim, Sangwoo

doi:10.1016/j.apsusc.2022.155143

Cited by 5 publications

(1 citation statement)

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“…The primary approach for developing 3D NAND is increasing the number of Si 3 N 4 /SiO 2 multistack layers (Figure a). − However, with the growing stacking of the pair layers, the dielectric SiO 2 layers are susceptible to dissolution by the hot-concentrated phosphoric acid (PA) solution, which is the etchant for the selective Si 3 N 4 etching process (Figure b). − The resultant thinning of SiO 2 layers (Figure c) disrupts the feasibility of subsequent processes . To inhibit SiO 2 etching, additives are considered a promising approach presently.…”

Section: Introductionmentioning

confidence: 99%

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Zhou,

Han,

et al. 2024

ACS Appl. Electron. Mater.

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The SiO 2 layers, as the dielectric in the multistack storage cells of 3D NAND, are detrimentally dissolved by phosphoric acid (PA) during the selective Si 3 N 4 etching. The thinning of SiO 2 layers leads to the failure of subsequent processes; thus, an etching inhibitor for SiO 2 is crucial for 3D NAND fabrication. However, most inhibitors are currently limited to neutral or alkaline solutions. In this work, the γ-ureidopropyltriethoxysilane (UPTES), compatible with a hot-concentrated PA solution, was applied to the wet-etching process for the first time and exhibited an inhibitory effect on SiO 2 etching by retarding the etch rate over 60% without affecting the Si 3 N 4 etching. The saturation adsorption of UPTES on the SiO 2 substrate is confirmed to occur around the critical concentration, according to the Langmuir−Freundlich adsorption isotherm. The adsorption behavior of UPTES exhibits a reliance on its concentration. Around the critical concentration, the UPTES molecules chemisorb on the SiO 2 surface by Si−O−Si covalent bonds to form ordered UPTESsiloxane layers, avoiding contact between SiO 2 and the etchant; whereas oversaturated UPTES polymers physisorb not only on SiO 2 but also on Si 3 N 4 , impeding the Si 3 N 4 etching. This work contributes to a step forward in the effective wet-etching process in highdensity 3D NAND fabrication.

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Section: Introductionmentioning

confidence: 99%

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Zhou,

Han,

et al. 2024

ACS Appl. Electron. Mater.

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How illumination treatment affects on copper-assisted chemical etching of silicon wafers

Tong,

Ma,

Yang

et al. 2025

Applied Surface Science

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Preventing oxide precipitation in selective wet etching of Si3N4 for 3D-NAND structure fabrication: The role of bubbles

Zhang,

Yang,

Yuan

et al. 2024

Microelectronic Engineering

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Passivation of poly-Si surface using vinyl and epoxy group additives for selective Si3N4 etching in H3PO4 solution

Cited by 5 publications

References 38 publications

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

How illumination treatment affects on copper-assisted chemical etching of silicon wafers

Preventing oxide precipitation in selective wet etching of Si3N4 for 3D-NAND structure fabrication: The role of bubbles

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Passivation of poly-Si surface using vinyl and epoxy group additives for selective Si3N4 etching in H3PO4 solution

Cited by 5 publications

References 38 publications

Study on the SiO2 Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO2 Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

How illumination treatment affects on copper-assisted chemical etching of silicon wafers

Preventing oxide precipitation in selective wet etching of Si3N4 for 3D-NAND structure fabrication: The role of bubbles

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Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication

Study on the SiO₂ Wet-Etching Mechanism Using γ-Ureidopropyltriethoxysilane as an Inhibitor for 3D NAND Fabrication