Passive integrated-optical waveguide structures by Ge-diffusion in silicon

Schmidtchen, J.; Schüppert, B.; Petermann, K.

doi:10.1109/50.293976

Cited by 19 publications

(5 citation statements)

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“…Here, the waveguides are produced using furnace annealing to indiffuse Ge from a Ge-rich SiGe strip source deposited on the substrate surface. [120] Although optical losses less than c-f ) Reproduced under the terms of the CC-BY license. [114,116] Copyright 2020 and 2019, The Authors, published by The Optical Society.…”

Section: Laser-assisted Diffusion Alloying and Intermixing Of Semiconductor Elements For Selective Area Growthmentioning

confidence: 99%

“…Here, the waveguides are produced using furnace annealing to indiffuse Ge from a Ge‐rich SiGe strip source deposited on the substrate surface. [ 120 ] Although optical losses less than 0.5 dB cm −1 were demonstrated at telecom wavelengths (largely due to the excellent Si substrate quality), this approach has not been widely adopted because of the long process times (65 h at 1200 °C) required by the furnace annealing, which renders the fabrication of waveguides impractical. [ 121 ] However, UV or visible laser annealing can be used to accelerate the diffusion process for practical fabrication of low‐loss diffused waveguides based on compound group IV semiconductors.…”

Section: Laser‐processed Planar Photonic Devicesmentioning

confidence: 99%

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Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored. In particular, flexible fabrication and postprocessing approaches that are compatible with different materials and allow for tuning of the components and systems are of great interest. Within this research area, laser thermal processing has emerged as an indispensable tool that can be applied to enhance and/or modify the material, structural, electrical and optical properties of group IV elemental and compound semiconductors at various stages of the production process. Herein, the recent progress made in the application of laser processing techniques to develop integrated semiconductor systems in both fiber‐ and planar‐based platforms is evaluated. Laser processing has allowed for the production of semiconductor waveguides with high crystallinity in the core and low optical losses, as well as postfabrication trimming of device characteristics and direct writing of tunable strain and composition profiles for bandgap engineering and optical waveguiding. For each platform, the current challenges and opportunities for the future development of laser‐processed integrated semiconductor photonic systems are presented.

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Section: Laser-assisted Diffusion Alloying and Intermixing Of Semiconductor Elements For Selective Area Growthmentioning

confidence: 99%

Section: Laser‐processed Planar Photonic Devicesmentioning

confidence: 99%

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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“…Some waveguide concepts require special growth or diffusion techniques [2,13,14], other waveguide concepts are based on an index step in the vertical direction of commercially available materials, which is due to the incorporated layers, i.e. epitaxial silicon with different doping levels in the substrate and epi-layer [15], or Silicon-On-Insulator (SOl) [16].…”

Section: Waveguide Conceptsmentioning

confidence: 99%

<title>Integrated optoelectronic waveguide detectors in SiGe for optical communications</title>

et al. 1995

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“…The refractive index of an SiGe alloy is determined by the Ge concentration [10] and any strain present also modifies the refractive index. In waveguides fabricated from germanium indiffused into silicon, very low losses of 0.3 dB cm −1 have been reported [15]. However, measurements on strained and relaxed SiGe/Si structures grown by CVD show larger losses than this, up to several dB cm −1 [13].…”

Section: Introductionmentioning

confidence: 97%

Erbium-doped Si_1-xGe_x/Si structures for light emitting diodes

Naveed¹,

Evans–Freeman²,

Vernon–Parry³

et al. 2000

Semicond. Sci. Technol.

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LEDs have been fabricated from erbium-doped Si and Si 1−x Ge x quantum wells, and exhibit radiation at 1.54 µm when operated in forward bias. The strained Si 1−x Ge x /Si quantum wells were doped with erbium, either by implantation or during MBE growth, for two germanium fractions, 13% and 25% respectively, and their quality was monitored by transmission electron microscopy. PL measurements as a function of temperature exhibit a dependence of the high temperature signal quenching on the germanium fraction. The forward-bias EL and PL from the Er:Si 1−x Ge x , exhibit different emission energies irrespective of whether the samples are ion implanted or doped during MBE growth. The energy changes are attributed to confinement of injected holes in the electroluminescence measurement by the quantum wells, and subsequent excitation of a different set of Er atoms which may be in the Si 1−x Ge x host. Electric field effects have been eliminated by performing the EL and PL under identical conditions. This is very encouraging for the potential use of SiGe waveguides in future injection-type silicon-based LEDs.

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Passive integrated-optical waveguide structures by Ge-diffusion in silicon

Cited by 19 publications

References 19 publications

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

<title>Integrated optoelectronic waveguide detectors in SiGe for optical communications</title>

Erbium-doped Si_1-xGe_x/Si structures for light emitting diodes

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Passive integrated-optical waveguide structures by Ge-diffusion in silicon

Cited by 19 publications

References 19 publications

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

<title>Integrated optoelectronic waveguide detectors in SiGe for optical communications</title>

Erbium-doped Si1-xGex/Si structures for light emitting diodes

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Erbium-doped Si_1-xGe_x/Si structures for light emitting diodes