Passive Reciprocal high-pass/low-pass 4-bit phase shifter at 2.45 GHz

Qureshi, Muhammad Tayyab; Desmaris, Vincent; Geurts, Marcel; Sluis, J Van De

doi:10.1109/eumc.2014.6986625

Cited by 13 publications

(7 citation statements)

References 8 publications

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“…The reflection type PS can achieve multioctave bandwidth, but usually require relatively large-size broadband circulators or directional couplers in X/Ku-band [23,24]. High/low pass type PS can achieve wider bandwidth, but occupy large areas [25].…”

Section: Commonmentioning

confidence: 99%

An 11-15GHz multifunctional MMIC with 1.7° RMS phase error, 26.5dBm P<sub>sat</sub> and >30% PAE for T/R module

Zhao

Tang²,

Chu³

et al. 2023

IEICE Electron. Express

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This paper presents an 11-15 GHz MMIC multifunction chip (MFC) with phase and amplitude control. The chip is based on the commonleg structure and comprises a phase shifter (PS), attenuator (ATT), T/R switch, gain compensation amplifiers (AMPs), driver stage AMPs and parallel control circuits. In the 11-15 GHz bandwidth, measurements show that the gain and saturation power (Psat) are higher than 21.5 dB and 26.5 dBm, while the efficiency is more than 30% in TX mode. In RX mode, the small signal gain is more than 10.2 dB, the NF is less than 9.8 dB, and output 1 dB power (OP1dB) is more than 8.5 dBm. The measured minimum RMS phase and amplitude errors are 1.7°and 0.45 dB, respectively.

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Section: Commonmentioning

confidence: 99%

An 11-15GHz multifunctional MMIC with 1.7° RMS phase error, 26.5dBm P<sub>sat</sub> and >30% PAE for T/R module

Zhao

Tang²,

Chu³

et al. 2023

IEICE Electron. Express

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show abstract

“…In [20], a 4-bit phase shift with only simulated results has low phase error at the center frequency of 2.45 GHz, but with a large circuit size. In [21], he presents a low-cost 4-bit reciprocal phase shifter in the 2.45 GHz ISM band with COTS components, which manages to reduce the size of the structure, but generates an increase in the phase error of 4.1°. In [22], a new method for phase shift design is presented using discrete components in high-pass, low-pass, band-pass and all-pass networks (APNs) in a frequency range of 530 to 1090 MHz, which is similar to the frequency range of the phase shifter proposed here.…”

Section: Bmentioning

confidence: 99%

Microstrip 3-Bit Fractal-based Phase Shifter

Pontes

Oliveira

Silva

et al. 2022

J. Microw. Optoelectron. Electromagn. Appl.

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This paper presents the implementation of a 3-bit microstrip fractal-based phase shifter operating in the 430 MHz to 470 MHz frequency range. The fractal structure is used to confine different delay line lengths in the same area due to the space-filling properties of the used Hilbert fractal curve. The proposed design has three bits corresponding to 45, 90, and 180 degrees phase changes selected according to the switching circuit based on a Double Pole Double Throw (DPDT) switch implemented with PIN diodes. Comparisons between simulated and measured results are shown according to the chosen degree of use of PIN diodes.

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“…which have been implemented with a switched transmission line, loaded line, reflection type, high-low pass and all-pass network. For IC implementation, the high-low pass phase shifter has been found to be an ideal on-chip solution for small size, flat phase response over a wide band and the ability to cancel out phase effects induced by switches and routing schemes [14,[21][22][23][24][25][26][27]. A phase shifter with 5.6-degree phase resolution is designed using CMOS passive switches.…”

Section: Phase Shiftermentioning

confidence: 99%

Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 BiCMOS

Yun

et al. 2020

IET Microwaves, Antennas & Propagation

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In this study, the authors present a P‐band phased array front‐end for radar applications, implemented using a 0.18 μm SiGe BiCMOS process, thereby enhancing robustness over process‐voltage‐temperature (PVT) variations. It comprises a low noise amplifier, 6‐bit attenuator, 6‐bit phase shifter, power amplifier, T‐R switches as well as control circuits. As the key here is to achieve high resolutions in both gain and phase controls, the 6‐bit attenuator and 6‐bit phase shifter are optimised by cascading unit cells with different topologies, hence ensuring a good balance between accuracy, silicon area and robustness. Temperature compensation techniques are also used in the low noise amplifier and power amplifier so that the circuit works robustly against PVT variations. Fabricated using TowerJazz 0.18 μm SiGe BiCMOS technology, the prototype front‐end occupies a chip area of 5×2.5thinmathspacenormalmm2, including bonding pads and test buffers. It performs with a receiver (RX) gain of 12 dB, a 3 dB noise figure, and a transmitter (TX) gain of 29 dB, while consuming 60 mW (RX mode) and 600 mW (TX mode) from a 3.3 V supply voltage. The chip is also measured in extreme conditions (e.g. temperatures exceeding 100°C) to ensure robust operation and is suitable for low‐cost phased array systems.

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Passive Reciprocal high-pass/low-pass 4-bit phase shifter at 2.45 GHz

Cited by 13 publications

References 8 publications

An 11-15GHz multifunctional MMIC with 1.7° RMS phase error, 26.5dBm P<sub>sat</sub> and >30% PAE for T/R module

An 11-15GHz multifunctional MMIC with 1.7° RMS phase error, 26.5dBm P<sub>sat</sub> and >30% PAE for T/R module

Microstrip 3-Bit Fractal-based Phase Shifter

Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 BiCMOS

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