Passive Resonant Level Shifter for Suppression of Crosstalk Effect and Reduction of Body Diode Loss of SiC MOSFETs in Bridge Legs

Tang, Ho-Tin; Chung, Henry Shu-Hung; Fan, John Wing-To; Yeung, Ryan Shun-Cheung; Lau, Ricky Wing-Hong

doi:10.1109/tpel.2019.2957985

Cited by 17 publications

(7 citation statements)

References 30 publications

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“…For different issues, different driver structures are proposed in other papers [32][33][34][35], as shown in Table 2. In this paper, the output voltage (DS) of MOSFET is 1000 V. The switching frequency is set between 85-150 kHz.…”

Section: Optimization Design Of Driving Circuitmentioning

confidence: 99%

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Underwater Power Conversion and Junction Technology for Underwater Wireless Power Transfer Stations

Yang,

Chen,

Zhang

et al. 2024

JMSE

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Underwater wireless power transfer (UWPT) systems are appropriate for battery charging of compact, submerged devices without a complicated and expensive sealing structure or human contact because the power source and load are not physically connected. For the shore-based power supply situation, the underwater power conversion and junction technology should be required to drop down shore-based voltage to the target voltage for the underwater energy supply of the UWPT system. This paper proposes a lightweight, high efficiency and power density underwater power conversion connector system for the UWPT system, in which the LLC resonant converter is constructed with SiC transistors. The full load range zero-voltage switching (ZVS) and load adaptive characteristics have been achieved. The optimized RC level shift driver is adopted to highly reduce the switching loss of SiC transistors. Shore-based voltage of 1000 V was converted to the target voltage of 375 V for the UWPT system. The highest measured efficiency is over 98% at a load power level of 1500 W underwater conditions.

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Section: Optimization Design Of Driving Circuitmentioning

confidence: 99%

“…In this paper, the output voltage (DS) of MOSFET is 1000 V. The switching frequency is set between 85-150 kHz. Based on [32][33][34][35], the RC level shift structure is selected as the gate driving structure. A traditional level shift structure uses resistors and capacitors to form an energy absorption circuit.…”

Section: Optimization Design Of Driving Circuitmentioning

confidence: 99%

Underwater Power Conversion and Junction Technology for Underwater Wireless Power Transfer Stations

Yang,

Chen,

Zhang

et al. 2024

JMSE

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“…Although it can prevent false turn-on of the switch, the risk of reverse breakdown of the gate insulation layer will increase [17]. Thus, passive resonant level shifters are used to suppress the positive and negative crosstalk voltage [18]. This method suppresses crosstalk by decreasing the turn-off voltage of devices when it is suffered to the positive crosstalk.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

Xiao-li

Zhang

et al. 2022

IEEE Access

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Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly. Most of the existing crosstalk suppression methods are aimed at decreasing the crosstalk voltage introduced by the parasitic gate-drain capacitance (Miller capacitance), ignoring the influence of other parasitic parameters on the crosstalk voltage, such as the common source inductance, which may also lead to more serious reliability problems. Thus, this paper firstly establishes the mathematical model of the switching process of the SiC MOSFET half-bridge inverter. Then, the effects of various parasitic parameters (the gate-source capacitance, the gate-drain capacitance, the common source inductance, the gate inductance, the drain inductance) on the crosstalk voltage are analyzed and modeled in detail, which is verified by experiments. Based on the analyses and models, a novel crosstalk voltage suppression circuit is proposed, which can not only suppress the crosstalk caused by the gate-drain capacitance, but also solve the crosstalk issue considering the influence of other parasitic parameters, such as the common source inductance. Finally, a double pulse test platform is established to verify the effectiveness of the designed crosstalk suppression circuit under different voltage/current conditions.

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“…The process of the turn‐off period evokes negative gate voltage spikes, which could overstress the devices. This phenomenon of gate voltage distortion is usually called crosstalk, and with the high‐speed switching of SiC MOSFET, the crosstalk problem grows to be more noticeable, leading to drive oscillation, excessive switching loss, and shoot‐through failure, which will vitiate the transmission efficiency and reliability of the systems 15–18 …”

Section: Introductionmentioning

confidence: 99%

Characteristic analysis and suppression of SiC MOSFET‐based crosstalk for inductive power transfer systems

Zhang

Guo

et al. 2021

Circuit Theory & Apps

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Due to the lower gate threshold voltage of silicon carbide (SiC) MOSFET as compared with the silicon (Si) MOSFET, crosstalk significantly limits the high‐speed switching performance of SiC MOSFET‐based inductive power transfer (IPT) systems. The paper studies the crosstalk characteristic and proposes a suppression method of crosstalk aiming at IPT systems with phase‐shifted control. Firstly, the generation mechanism of crosstalk is modeled and analyzed. Then, based on the analysis results, the special crosstalk problem for IPT systems with phase‐shifted control is discussed, and a crosstalk suppression method is analyzed based on the optimization of compensation network parameters. Finally, a 1‐kW IPT system prototype is built for experimental verification. The experimental results show that the optimization method can effectively suppress the crosstalk problem of the IPT system with phase‐shifted control and does not significantly affect the output power and transmission efficiency.

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Passive Resonant Level Shifter for Suppression of Crosstalk Effect and Reduction of Body Diode Loss of SiC MOSFETs in Bridge Legs

Cited by 17 publications

References 30 publications

Underwater Power Conversion and Junction Technology for Underwater Wireless Power Transfer Stations

Underwater Power Conversion and Junction Technology for Underwater Wireless Power Transfer Stations

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

Characteristic analysis and suppression of SiC MOSFET‐based crosstalk for inductive power transfer systems

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