2007
DOI: 10.1051/epjap:2007117
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Passively Q-switched mode-locking of diode-pumped Nd:YVO4laser with GaAs intracavity absorber grown at low temperature

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“…This device, responsible for the internal self-modulation of the cavity finesse, leads to the pulse generation. In the case of mode locking, these pulses are individual dissipative solitons (DSs) [14][15][16][17] while in the case of Q switching, they are amplitude modulated sequences of dissipative solitons [18][19][20]. Two consequences of such relation are, first, the duration of the Q-switched pulses is much longer than the duration of mode-locked pulses and, second, both type of pulses can be modeled using similar tools [21].…”
Section: Introductionmentioning
confidence: 99%
“…This device, responsible for the internal self-modulation of the cavity finesse, leads to the pulse generation. In the case of mode locking, these pulses are individual dissipative solitons (DSs) [14][15][16][17] while in the case of Q switching, they are amplitude modulated sequences of dissipative solitons [18][19][20]. Two consequences of such relation are, first, the duration of the Q-switched pulses is much longer than the duration of mode-locked pulses and, second, both type of pulses can be modeled using similar tools [21].…”
Section: Introductionmentioning
confidence: 99%