Past achievements and future challenges in the development of optically transparent electrodes

Ellmer, K.

doi:10.1038/nphoton.2012.282

Cited by 1,819 publications

(1,371 citation statements)

References 82 publications

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“…They are used in applications ranging from solar cells, displays, smart windows, and touch screens to light-emitting diodes. [1][2][3][4] In TCOs such as In 2 O 3 , SnO 2 , and ZnO, the energy at which absorption of photons can lead to excitation of electrons from the valence band into the conduction band) is above the visible region. What is often overlooked in the consideration of the transparency criterion is that the free carriers that need to be present to ensure high conductivity can also absorb photons.…”

Section: Introductionmentioning

confidence: 99%

Free-carrier absorption in transparent conducting oxides: Phonon and impurity scattering inSnO2

2015

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Indirect absorption plays an important role in the transparency of transparent conducting oxides. We provide a detailed first-principles study of phonon-and charged-impurity-assisted free-carrier absorption, with the example of SnO2. The dominant phonon modes contributing to the electronphonon coupling are identified and are used to assess the validity of the Fröhlich model. We find that phonon-assisted indirect absorption dominates if the ionized dopant concentration is below 10 20 cm −3 , and that phonon emission dominates this process. We also discuss subtle but important issues relating to the calculation of optical transition matrix elements.

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Section: Introductionmentioning

confidence: 99%

Free-carrier absorption in transparent conducting oxides: Phonon and impurity scattering inSnO2

2015

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“…Peak APCEs of 28, 38 and 44% were calculated for the PMI-8T-TPA-sensitized devices employing [Co(en) 3 Figures S9-S13), highlighting that nearly every second absorbed photon was converted to an electron-hole pair under ideal conditions. Although these results are noteworthy, further improvements are necessary to boost device efficiency, which can lead to a viable technology.…”

Section: Resultsmentioning

confidence: 99%

“…For [Co(en) 3 ] 3+/2+ , the two decay curves overlap, showing that the dye regeneration yield was o50% (to observe a regeneration yield of 50%, the rate constant would need to be twofold higher; simulations revealed that these TA spectroscopic traces, considering the experimental noise, are difficult to distinguish and lie nearly on top of each other). For I 3 − /I − and [Fe(acac) 3 ] 0/ − , the dye regeneration rate was 5-10 times faster than the recombination reaction, thus providing an explanation for the higher photocurrent measured for these devices. Nevertheless, the recombination losses between the injected holes and the dye anions are still significant and need to be addressed by either slowing down the recombination reaction or facilitating faster dye regeneration.…”

Section: Ito For Efficient P-dscsmentioning

confidence: 90%

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Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Perera

Daeneke

et al. 2016

NPG Asia Mater

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Indium tin oxide (ITO) is a well-known n-type degenerate semiconductor with a wide variety of electronic and optoelectronic applications. Herein ITO is utilized as a photocathode material in p-type dye-sensitized solar cells in place of the commonly applied and highly colored nickel oxide (NiO) semiconductor. The application of mesoporous ITO photocathodes, [Fe(acac) 3 ] 0/ − as a redox mediator and a new organic dye afforded an impressive energy conversion efficiency of 1.96 ± 0.12%. Comparative transient absorption spectroscopic studies indicated that the recombination rate at the ITO-electrolyte interface is two orders of magnitude faster than that of NiO. Analysis of the operation mechanism of the ITO-based devices with ultraviolet photon spectroscopy and photoelectron spectroscopy in air showed that ITO exhibits a significant local density of states arising below − 4.8 eV, which enables electron transfer to occur from the ITO to the excited dye, thus giving rise to the sustained photocathodic current. NPG Asia Materials (2016) 8, e305; doi:10.1038/am.2016.89; published online 9 September 2016 INTRODUCTION Transparent conducting oxides have been extensively used in optoelectronic applications. 1-3 One common transparent conducting oxide is indium tin oxide (ITO). ITO is a well-known n-type degenerate semiconductor 4 with an optical band gap of 3.5-4.3 eV 5 and has a high transmission in the near infrared and visible regions of the electromagnetic spectrum. Owing to their high optical transparency, good electrical conductivity, chemical inertness, hardness and excellent substrate adherence, 6-8 ITO thin films are applied in flat panel displays, antistatic coatings, solar cells, camera lenses and architectural glazing. 9-12 Additionally, high-surface-area mesoporous ITO films have been used as sensors for gases, such as ammonia, nitric oxide, ethanol and methanol. [13][14][15][16] Moreover, ITO films and ITO/TiO 2 core-shell structures have been utilized as photoanodes in both dye-sensitized solar cells (DSCs) and water oxidation devices. [17][18][19][20] A recent spectroscopic investigation into the charge transfer dynamics of dye-coated ITO films revealed that ITO can both accept and donate electrons during photoinduced charge transfer. 21,22 By exploiting the ambivalent property of this degenerate n-type semiconductor, we have developed an efficient p-type DSC (p-DSC)

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“…Conventionally, the most common materials are indium tin oxide (ITO) and fluorine tin oxide (FTO), which are widely used as the transparent electrode in many optoelectronic devices because of their good combination of high transparency and low resistance [16][17][18]. However, these metal oxides exhibit several issues due to the high cost, resulting mostly from the indium scarcity [19], their brittleness [20], the device degradation due to indium diffusion into the photoactive layer [21], and the requirement for high cost coating methods [20].…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed Graphene-Based Transparent Conductive Electrodes as Ideal ITO Alternatives for Organic Solar Cells

Stylianakis¹,

Konios²,

Petridis³

et al. 2017

Graphene Materials - Advanced Applications

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The isolation of free-standing graphene in 2004 was the spark for a new scientific revolution in the field of optoelectronics. Due to its extraordinary optoelectronic and mechanical properties, graphene is the next wonder material that could act as an ideal low-cost alternative material for the effective replacement of the expensive conventional materials used in organic optoelectronic applications. Indeed, the enhanced electrical conductivity of graphene combined with its high transparency in visible and near-infrared spectra, enabled graphene to be an ideal low-cost indium tin oxide (ITO) alternative in organic solar cells (OSCs). The prospects and future research trend in graphenebased TCE are also discussed. On the other hand, solution-processed graphene combines the unique optoelectrical properties of graphene with large area deposition and flexible substrates making it compatible with printing and coating technologies, such as roll-to-roll, inkjet, gravure, and flexographic printing manufacturing methods. This

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Past achievements and future challenges in the development of optically transparent electrodes

Cited by 1,819 publications

References 82 publications

Free-carrier absorption in transparent conducting oxides: Phonon and impurity scattering inSnO2

Free-carrier absorption in transparent conducting oxides: Phonon and impurity scattering inSnO2

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Solution-Processed Graphene-Based Transparent Conductive Electrodes as Ideal ITO Alternatives for Organic Solar Cells

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