Past switching in sandwich structures on the basis of GexTe1 − x alloys

Babenskas, E.; Balevičius, Saulius; Česnys, A.; Poškus, Andrius; Šiktorov, N.

doi:10.1016/s0022-3093(87)80495-7

Cited by 16 publications

(11 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In some of the chalcogenides, such as Al-Te-Ge [34], Ge-Se-Tl films [18] etc., V T has been found to be proportional to thickness ''t". However, V T is found to be proportional to t 1/2 in certain memory switching glasses (Ge-Te [35], Ge-As-Te [36]). Earlier, It has been suggested that the switching voltage will vary as t, t 1/2 or t 2 , depending on whether the mechanism responsible for switching is purely electronic, purely thermal, or based on carrier injection [37].…”

Section: Thickness Dependence Of V Tmentioning

confidence: 98%

High field electrical switching behavior of Ge10Se90−xTlx glasses

Madhu

Jayanna

Asokan

2009

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Section: Thickness Dependence Of V Tmentioning

confidence: 98%

High field electrical switching behavior of Ge10Se90−xTlx glasses

Madhu

Jayanna

Asokan

2009

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

“…Generally, in memory switching glasses such as Ge-Te [26], Ge-As-Te [27], etc., V th has been found to be proportional to t 1/2 . In bulk Al-Te-Ge [28] and Ge-Se-Tl films [29], V th has been found to be proportional to the thickness "t".…”

Section: Thickness Dependence Of V Thmentioning

confidence: 99%

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Rahman¹,

Rukmani²,

Asokan³

2011

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Bulk Ge 17 Te 83−x Tl x glasses (0 ≤ x ≤ 13), have been found to exhibit memory type electrical switching. The switching voltages (also known as threshold voltage -V th ) of Ge 17 Te 83−x Tl x glasses are found to decrease with increasing thallium content. The rate of decrease of V th is greater at lower concentrations and V th falls at a slower rate for higher thallium concentrations (x ≥ 6). The addition of thallium to the Ge-Te network fragments the covalent network and introduces ionic nature to it; the reduction in network connectivity leads to the decrease in switching voltages with thallium content. The decrease in the glass transition temperatures of Ge 17 Te 83−x Tl x glasses with increasing thallium concentration supports the idea of decrease in network connectivity with Tl addition. The more metallic nature of Tl also contributes to the observed reduction in the switching voltages of Ge 17 Te 83−x Tl x glasses with Tl content. Further, there is an interesting correlation seen between the threshold voltage V th and the average bond energy, as a function of Tl content. In addition, the switching voltages of Ge 17 Te 83−x Tl x glasses have been found to decrease with sample thickness almost linearly. The set-reset studies indicate that the Ge 17 Te 81 Tl 2 sample can be switched for more than 10 cycles, whereas other glasses could not be reset beyond two switching cycles.

show abstract

“…It is also known that weaker bond, poor structural cross-linking and more lone-pair interactions [21] favor memory switching in telluride glasses. The present studies reveal that Ge 18 Te 82-x Bi x glasses also exhibit memory type electrical switching like many other binary and ternary telluride glasses such as Ge-Te, Si-Te, As-Te, Al-Te, As-Se-Te, Ge-As-Te, Ge-Te-Cu [22][23][24][25][26][27][28][29].…”

Section: Electrical Switching Behavior Of Ge-te-bi Glassesmentioning

confidence: 97%

“…A linear variation of V th with t, has been seen in samples like Ge-Te-Al [42], As-Se [43], Ge-Se-Tl [44]. However, a few samples like Ge-As-Te [45], Ge-Te [22] have been found to exhibit a t 1/2 variation with V th . In the present sample, the variation of threshold voltage V th with thickness has been observed to be linear (Fig.…”

Section: Thickness Dependence Of Switching Voltagesmentioning

confidence: 98%