Pathways of hydrogen atom diffusion at fcc Cu: Σ9 and Σ5 grain boundaries vs single crystal
Cláudio M. Lousada,
Pavel A. Korzhavyi
Abstract:The diffusion of H-atoms is relevant for innumerous physical–chemical processes in metals. A detailed understanding of diffusion in a polycrystalline material requires the knowledge of the activation energies (ΔEa’s) for diffusion at different defects. Here, we report a study of the diffusion of H-atoms at the Σ9 and Σ5 grain boundaries (GBs) of fcc Cu that are relevant for practical applications of the material. The complete set of possible diffusion pathways was determined for each GB and we compared the ΔEa… Show more
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