Patterned <i>L</i>1<sub>0</sub>-FePt for polarization of magnetic films

We present here the implementation of a magnetoelectric memory with a voltage driven writing method using a ferroelectric relaxor substrate. The memory point consists of a magnetoelastic element in which two orthogonal stable magnetic states are defined by combining uni-axial anisotropy together with a magnetic polarization in the hard axis direction. Using a ferroelectric relaxor substrate, an anisotropic stress is created in the magnetic element when applying a voltage across electrodes. Because of the inverse magnetostrictive effect, the effective anisotropy of the magnetic element is controlled by the applied voltage and used to switch magnetization from one state to the other.

show abstract

“…18 Biasing strategies for the magnetic polarization using FePt permanent magnet layers are also investigated. 19 FIG. 4.…”

Section: Discussionmentioning

confidence: 96%

Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Dusch

Tiercelin

Klimov

et al. 2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…This can be simply implemented using patterned nanomagnets. 38 Concerning the geometry of the nanostripe, we considered L ¼ 400 nm, h ¼ 20 nm, and a quadratic shape function 'ðxÞ ¼ a þ 4ðbÀaÞ L 2 x 2 , where a ¼ lð0Þ ¼ 40 nm (central width) and b ¼ lð6L=2Þ ¼ 80 nm (width at extremities). In Fig.…”

Section: Figmentioning

confidence: 99%

Stress-mediated magnetoelectric control of ferromagnetic domain wall position in multiferroic heterostructures

Mathurin

Giordano

Dusch

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

The motion of a ferromagnetic domain wall in nanodevices is usually induced by means of external magnetic fields or polarized currents. Here, we demonstrate the possibility to reversibly control the position of a N eel domain wall in a ferromagnetic nanostripe through a uniform mechanical stress. The latter is generated by an electro-active substrate combined with the nanostripe in a multiferroic heterostructure. We develop a model describing the magnetization distribution in the ferromagnetic material, properly taking into account the magnetoelectric coupling. Through its numerical implementation, we obtain the relationship between the electric field applied to the piezoelectric substrate and the position of the magnetic domain wall in the nanostripe. As an example, we analyze a structure composed of a PMN-PT substrate and a TbCo 2 /FeCo composite nanostripe.

show abstract

Strain-driven magnetic domain wall dynamics controlled by voltage in multiferroic heterostructures

Shi

Peng

et al. 2022

Journal of Magnetism and Magnetic Materials

View full text Add to dashboard Cite

Patterned L1₀-FePt for polarization of magnetic films

Cited by 5 publications

References 8 publications

Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Stress-mediated magnetoelectric control of ferromagnetic domain wall position in multiferroic heterostructures

Strain-driven magnetic domain wall dynamics controlled by voltage in multiferroic heterostructures

Contact Info

Product

Resources

About

Patterned L10-FePt for polarization of magnetic films

Cited by 5 publications

References 8 publications

Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Stress-mediated magnetoelectric control of ferromagnetic domain wall position in multiferroic heterostructures

Strain-driven magnetic domain wall dynamics controlled by voltage in multiferroic heterostructures

Contact Info

Product

Resources

About

Patterned L1₀-FePt for polarization of magnetic films