Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

Lee, Sangkyu; Kim, Jeonghyun; Choi, Jung‐Hyun; Park, Hyun-Jung; Ha, Jaehyun; Kim, Yongkwan; Rogers, John A.; Paik, Ungyu

doi:10.1063/1.3691177

Cited by 62 publications

(51 citation statements)

References 18 publications

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“…By reducing the capillary-to-collector distance, EHDP can achieve organized fine patterns with good position control in contrast to other conventional electrohydrodynamic deposition such as electrospin with randomly distributed fiber depositions or electrospray with uncontrolled depositions of droplets. This technique has attracted great attention due to its potential in the fabrication of electric circuit, 6 electronics, 7 biocatalyst, 8 and nanogenerator. 9 One of the most important aspects related to EHDP is the liquid ejection mode, of which depends on various factors including material properties and flow rate of solution, as well as the voltage applied.…”

Section: Introductionmentioning

confidence: 99%

Current characteristics of various ejection modes in electrohydrodynamic printing

et al. 2015

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The real-time observation of electrohydrodynamic printing (EHDP) process is of importance in practical applications. The electric current is a reflection of charge transfer and might provide a potential method to detect the liquid behavior. In this paper, current during EHDP process is measured and studied to investigate the relationship with liquid behaviors. Experimental results show that the liquid ejection can be accurately reflected by the current signal. Current of various ejection modes in EHDP are then examined, and various characteristic numbers are summarized to identify the present liquid ejection mode. This work proposes a simple and efficient method by combining current detection and visual observation to achieve better real-time monitoring and controlling of EHDP process.

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Section: Introductionmentioning

confidence: 99%

Current characteristics of various ejection modes in electrohydrodynamic printing

et al. 2015

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“…19 In 2 O 3 Rheology 10.2 10 5 V on = 0 Lee et al 22 SnO 2 Thermal inkjet 3.62 10 3 V on = −39 Lee et al 23 IZTO Piezoelectric inkjet 30 10 6 V on = 2 Han et al 24 IGO Piezoelectric inkjet 5.5 10 5 V on = −21 Kim et al 25 ZTO Piezoelectric inkjet 4.98 10 9 V on = −9 Avis et al 28 IZTO Piezoelectric inkjet 114. 8 10 7 V th = −0.16 Garlapati et al 29 In 2 O 3 Piezoelectric inkjet 126 * 2 × 10 7 V on = 0.37 Kim et al 31 ZTO Piezoelectric inkjet 0.58 5 × 10 6 V th = 1.9 Jeong et al 32 ZTO Piezoelectric inkjet 0.58 10 7 V th = 1.7 Kim et al 33 IGZO Piezoelectric inkjet 0.03 5 × 10 4 V th = 6.2 Kim et al 34 IGZO Piezoelectric inkjet 0.055 10 3 V th = −0.5 Wang et al 35 IGZO Piezoelectric inkjet 1.41 4 × 10 7 V th = −0.5 Wang et al 36 IGZO Piezoelectric inkjet 0.82 6 × 10 5 V th = 7 Hennek 37 IGZO Piezoelectric inkjet 2.45 9 × 10 5 V th = 21.9 Jeong et al 38 IGZO Piezoelectric inkjet 7.6 10 7 V th = 11.1 Meyers et al 39 ZnO Thermal inkjet 6.1 >10 6 V on = −7 Dilfer et al 40 IZO Flexographic 2.4 5 × 10 7 V th = 4 Choi et al 41 IGZO Gravure 0.81 10 6 V on = 1.35 Eun et al 42 ZnO Transfer 0.49 * * 10 5 V th = 12 Lee et al 43 IZO EHD 32 * * * 10 3 V th = <2 Lee et al 44 ZTO EHD 9.82 3 × 10 6 V th = 2.16 Jeong et al 45 IGZO EHD 10.4 10 7 V th = 4.1 Dasgupta et al 46 In 2 O 3 Piezoelectric inkjet 0.8 * * * * 2 × 10 3 V on = 0 Liu et al 47 ZnO Piezoelectric inkjet 0.69 4 × 10 1 V th = 25.5 Noh et al 48 ZnO NW SAP 4 10 4 EHD: Electrohydrodynamic SAP: Self-aligned inkjet printing * The device was performed with polymer dielectric layer * * The performances were measured from the device prior to the transferring * * * The device was performed with HfO dielectric layer * * * * The device was fabricated at room temperature…”

Section: Summary and Future Directionsmentioning

confidence: 99%

“…Lee et al used the electrohydrodynamic (EHD) jet printing to fabricate IZO TFTs (Figure 6a-6c). 47 After optimizing the ink fluid composition, they employed the EHD printer to print the IZO channel layer for the fabrication of printed IZO TFTs. They also fabricated invisible printed IZO TFTs, with a visible transparency value larger than 88%.…”

Section: Development Of Printed Metal Oxide Tftsmentioning

confidence: 99%

Printed Oxide Thin Film Transistors: A Mini Review

Choi

Lin

Cheng

et al. 2015

ECS J. Solid State Sci. Technol.

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Compared to conventional amorphous silicon (a-Si) TFTs, amorphous metal oxide TFTs have superior device performance such as higher mobility, better sub-threshold swing, and lower off-state current. Amorphous metal oxide TFTs have an additional advantage on the device uniformity due to the lack of grain boundary issues in the poly-Si TFTs. Compared with sputtered oxide TFTs, metal oxide TFTs with solution processes have better flexibility and controllability to adjust the composition of chemical solution. Among various solution-based approaches, direct printing is a promising low-cost technique in fabricating TFTs. The printing technique offers several advantages in manufacturing electronics such as a direct writing of materials, reduction of chemical waste, and reproducibility with high-resolution scale, which are not affordable from other solution-based approaches. While many printed OTFTs have been reported, relatively fewer studies, associated with printed metal oxide TFTs, have been pursued. Interests to printed metal oxide TFTs have grown continuously since the first report of a general route toward printed oxide TFTs. A variety of metal oxide materials have been reported as the channel layer of printed metal oxide TFTs. In this mini review paper, the development of printed metal oxide TFTs was discussed including the ink formulations, the types and characteristics of the applied printers, and fabricated thin film transistor characteristics. Lastly the review is concluded with a concise summary and future outlook from an industry perspective. Thin film transistors (TFTs), first reported by Lilienfeld and Heil almost nine decades ago, have continuously being developed and improved for low cost electronic switches.1,2 Advanced fabrication techniques and materials expand its application to low cost, large size, high resolution, and high-speed flat panel displays.3 The greatest advancement was accompanied with the advent of a-Si:H as a semiconductor channel layer.4 Although a-Si:H semiconductor exhibited lower electronic properties (carrier mobility ≤ 1 cm 2 /Vs) than TFTs based on polycrystalline channel layers (e.g. CdS), the electronic transport properties of a-Si:H were sufficient as switching elements in Liquid Crystal Displays, along with other benefits such as lower cost, high uniformity and excellent reproducibility in large area fabrication. However, lower performances of a-Si:H TFTs limit its application in AMOLED display. Metal oxide semiconductors have been intensively researched over the past decade due to their superior electrical properties including high carrier mobility (∼1-100 cm 2 /Vs), high optical transparency, good thermal/environmental durability, and potentially low-manufacturing cost.5,6 Significant progress of metal oxide TFTs has demonstrated the advantages over a-Si:H TFTs as next candidate for high-performance display applications. 7,8 In terms of manufacturing metal oxide semiconductors as the active channel layers in TFTs, gas-phase deposition technique that requires high vacuum f...

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“…10 Direct-write doesn't require stencil-plate and etching process, displays good material compatibility with micro organic structure fabrication. 11 As a fast, low-cost, direct and precise organic fabrication technology, direct-write meets the development requirement of flexible and organic electronic. 12 By taking the advantage of stable straight region in charged jet, Electrohydrodynamic DirectWrite (EDW) [13][14][15] provides a new way to realize the precise deposition of micro/nano-structures on the flat substrate directly.…”

Section: Introductionmentioning

confidence: 99%

Rheology behaviors of stable electrohydrodynamic direct-write jet

Wang

Zheng

et al. 2016

AIP Advances

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Electrohydrodynamic direct-write (EDW) is a novel direct-write technology to fabricate micro/nano-structures from viscoelastic solution, which had displayed great application potential in organic electronic device. Due to the shorter spinneret to substrate distance, the rheology behaviors of EDW charged jet played an important role in defining the line width or diameter of the direct-written micro/nano-structures. High speed camera is utilized to observe the rheology process of EDW charged jet, and solidified jets are measured by SEM that offers a quantitative method to investigate the diameter evolution of jet. The diameter of charged jet and nanofiber injected from solid probe increase with the increasing of polymer solution concentration. Attribute to the larger diameter and higher solvent content, charged jet injected from hollow nozzle displayed greater fluid viscoelasticity, and then stretched into micro structure of flat film under the gravitation on the substrate. The diameter of charged jet and line width of thin film injected from nozzle decrease with the increasing of polymer concentration.

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Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

Cited by 62 publications

References 18 publications

Current characteristics of various ejection modes in electrohydrodynamic printing

Current characteristics of various ejection modes in electrohydrodynamic printing

Printed Oxide Thin Film Transistors: A Mini Review

Rheology behaviors of stable electrohydrodynamic direct-write jet

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