Patterning 2D materials for devices by mild lithography

Weinhold, Marcel; Klar, Peter J.

doi:10.1039/d1ra04982h

Cited by 7 publications

(7 citation statements)

References 63 publications

(92 reference statements)

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“…Various approaches exist for strain engineering in 2D materials. One method involves lithographic patterning [ 17 ] of stressed thin films to selectively induce tension, compression, uniaxiality, and biaxiality relative to crystal axes. Additionally, novel experimental methods have been developed to overcome the limitations of traditional bulk mechanical testing for atomically thin structures [ 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

First Principle Study on the Effect of Strain on the Electronic Structure and Carrier Mobility of the Janus MoSTe and WSTe Monolayers

El Hamdaoui,

Pérez,

Ojeda-Martínez

et al. 2023

Nanomaterials

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Using first-principle calculations, we investigate the impact of strain on the electronic structures and effective masses of Janus WSTe and MoSTe monolayers. The calculations were performed using the QUANTUM-ESPRESSO package, employing the PBE and HSE06 functionals. Our results demonstrate that strain fundamentally changes the electronic structures of the Janus WSTe and MoSTe monolayers. We observe that deformation causes a shift in the maxima and minima of the valence and conduction bands, respectively. We find that the effective electrons and hole masses of MoSTe and WSTe can be changed by deformation. In addition, the strain’s effect on carrier mobility is also investigated in this work via the deformation potential theory.

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Section: Introductionmentioning

confidence: 99%

First Principle Study on the Effect of Strain on the Electronic Structure and Carrier Mobility of the Janus MoSTe and WSTe Monolayers

El Hamdaoui,

Pérez,

Ojeda-Martínez

et al. 2023

Nanomaterials

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“…The need for elevated growth temperature, chemically active precursors and promoters [11][12][13], coupled with the necessity for epitaxial growth, presents a challenge for the direct growth of 2D materials on technologically relevant substrates like Si. Consequently, a variety of methods have emerged to facilitate the transfer of 2D materials from their growth substrates to target wafers, each yielding varying degrees of contamination, non-uniformity and transfer-induced damage [14][15][16]. These transfer techniques are conventionally classified into "wet" and "dry" categories.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, a tailored patterning technique specific to 2D-TMDCs layers is in high demand. Various patterning techniques have been explored thus so far [10,15,22,23]. However, the reported approaches either suffer from notable drawbacks or do not fulfill the requirements for patterning 2D-TMDC materials.…”

Section: Introductionmentioning

confidence: 99%

“…Other reported patterning techniques such as e-beam lithography or focused-laser writing also possess various limitations. For instance, the former demands an ultra-high vacuum condition, coupled with low yield and throughput, while the latter features substrate dependency and low resolution due to the large spot diameter of the laser [15,28,29].…”

Section: Introductionmentioning

confidence: 99%

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Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC

Ghiami,

Sun,

Fiadziushkin

et al. 2023

Crystals

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Extensive research into two-dimensional transition metal dichalcogenides (2D-TMDCs) over the past decade has paved the way for the development of (opto)electronic devices with enhanced performance and novel capabilities. To realize devices based on 2D-TMDC layers, compatible and optimized technologies such as layer transfer and photolithography are required. Challenges arise due to the ultrathin, surface-only nature of 2D layers with weak van der Waals adhesion to their substrate. This might potentially compromise their integrity during transfer and photolithography processes, in which prolonged exposure at usually high temperature to reactive chemicals and strong solvents are conventionally used. In this paper, we show that employing a dry-transfer technique based on thermal release tape (TRT) as an alternative to wet processes based on KOH solution better preserves layer quality. In the succeeding device fabrication process, an optimized photolithography as a cost-effective and widely available method for device patterning is utilized. The introduced photolithography protocol presents a near-perfect yield and reproducibility. To validate our optimized techniques, we fabricated field-effect transistors (FETs) using 2D-MoS2 layers from metal–organic chemical vapor deposition (MOCVD), wet- and dry-transferred onto SiO2/Si substrates. Our findings mark a significant stride towards the efficient and industry-compatible utilization of 2D van der Waals materials in device fabrication.

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“…A recent experiment has reported signatures of isolated flat bands and correlated states in buckled graphene on NbSe 2 . In addition to spontaneous buckling effects, periodic strain/deformations can also be achieved by thermal treatments, − pressure, − mechanical manipulation, − and deposition of the material on patterned substrates with controlled designs. − In these scenarios, the emergent superlattice structure imposes new constraints on the electron dynamics, akin to those produced in the twisted bilayer configuration.…”

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confidence: 99%

Topological Flat Bands in Strained Graphene: Substrate Engineering and Optical Control

2023

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The discovery of correlated phases in twisted moireś uperlattices accelerated the search for low-dimensional materials with exotic properties. A promising approach uses engineered substrates to strain the material. However, designing substrates for tailored properties is hindered by the incomplete understanding of the relationship between the substrate's shapes and the electronic properties of the deposited materials. By analyzing effective models of graphene under periodic deformations with generic crystalline profiles, we identify strong C 2z symmetry breaking as the critical substrate geometric feature for emerging energy gaps and quasi-flat bands. We find continuous strain profiles producing connected pseudomagnetic field landscapes are important for band topology. We show that the resultant electronic and topological properties from a substrate can be controlled with circularly polarized light, which also offers unique signatures for identifying the band topology imprinted by strain. Our results can guide experiments on strain engineering for exploring interesting transport and topological phenomena.

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Patterning 2D materials for devices by mild lithography

Abstract: Mild lithography allows patterning of 2D materials while minimizing processing-induced defects. Thus, their structural integrity and intrinsic properties are preserved.

Cited by 7 publications

References 63 publications

First Principle Study on the Effect of Strain on the Electronic Structure and Carrier Mobility of the Janus MoSTe and WSTe Monolayers

First Principle Study on the Effect of Strain on the Electronic Structure and Carrier Mobility of the Janus MoSTe and WSTe Monolayers

Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC

Topological Flat Bands in Strained Graphene: Substrate Engineering and Optical Control

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