Patterning capability of new molecular resist in EUV lithography

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

“… 18 , 29 Furthermore, the partially protected MGs display a higher T g compared to that of fully protected derivatives due to the intermolecular hydrogen bonding, 30 which can alleviate the pattern collapse. 31 Although partially protected molecular glass resists have been reported in several early literature studies, 27 , 32 , 33 the effect of the protection ratios on lithographic performance and the reason for the difference are still to be further studied. Therefore, MGs with appropriate protecting ratios are important for development of high-performance resists.…”

“…Partially protected MGs exhibit lower hydrophobicity, facilizing the wetting process with an alkaline developer. The unprotected hydroxyl groups in MGs enhance the adhesion to the substrate, which can avoid the peeling of the resist pattern during development. , Furthermore, the partially protected MGs display a higher T g compared to that of fully protected derivatives due to the intermolecular hydrogen bonding, which can alleviate the pattern collapse . Although partially protected molecular glass resists have been reported in several early literature studies, ,, the effect of the protection ratios on lithographic performance and the reason for the difference are still to be further studied.…”

A novel dual-tone molecular glass resist based on adamantane derivatives for electron beam lithography

“…The high surface tension of the aqueous developer tends to result in pattern collapse, especially in the case of high resolution. [36][37][38] Furthermore, it has become ever more challenging to print trenches and vias of small dimensions using a positive-tone resist because of the poor optical image contrast of the dark field masks used to create the trenches and vias. Therefore, negative-tone resists are usually used in these processes.…”

Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2∕H2∕Ar capacitively coupled plasmas

“…EUVL in its current form requires novel resist materials with high sensitivity to compensate for its lower operating source power. [1][2][3][4][5][6] Dielectric etch processes of a silicon oxide ͑SiO 2 ͒, silicon nitride ͑Si 3 N 4 ͒, or silicon oxynitride ͑SiON͒ hard mask using 193 nm ArF photoresist and EUV resist are critically important in the patterning of a multilayer resist structure due to continuously decreasing resist thickness. [7][8][9] Line edge roughness ͑LER͒ has also become an important issue in patterning nanoscale features because the LER of the resist is transferred to the underlayer during dry etching.…”