Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility

Fan, Daniel; Buitrago, Elizabeth; Shen, Yang; Karim, Waiz; Wu, Yanqing; Tai, Renzhong; Ekinci, Yasin

doi:10.1016/j.mee.2016.02.026

Cited by 15 publications

(7 citation statements)

References 14 publications

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“…The achromatic Talbot distance of the square lattice grid should be Z A = 2P 2 /Δλ, while the achromatic Talbot distance of the hexagonal lattice grid should be Z A = 3/2P 2 /Δλ [15]. ATL has been proved to be a very robust, highly efficient and simple technique to produce highly dense, high-resolution periodic nanostructures down to 15-nm feature size [16,17]. During ATL, all of the diffraction orders from different wavelengths overlap together, which makes full use of the beam power.…”

Section: Achromatic Talbot Lithographymentioning

confidence: 99%

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EUV/Soft X-Ray Interference Lithography

Shen¹,

Wu²

2018

Micro/Nanolithography - A Heuristic Aspect on the Enduring Technology

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Based on the coherent radiation from an undulator source, extreme UV interference lithography (EUV-IL) technology is considered as the leading candidate for future nodes of high-volume semiconductor manufacturing. The throughput of this technique is much higher than that of traditional lithography methods such as e-beam lithography (EBL) and laser interference lithography (LIL). Different types of interference schemes based on reflection mirrors and transmission diffraction masks have been described in this chapter. Achromatic Talbot lithography (ATL) and the soft X-ray interference lithography (SXIL) with different photon energies have also been developed to produce highly dense, highresolution periodic nanostructures. Two scan-exposure techniques, one is the method employing the broadband Talbot effect and the other based on the multi-grating EUV-IL with an order sorting aperture (OSA), have been used to obtain periodic nanostructures over large areas. Applications of EUV-IL on EUV-resist testing and nano-science have been illustrated.

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Section: Achromatic Talbot Lithographymentioning

confidence: 99%

“…This work was supported by National Key R&D Program of China (2016YFA0401302),the [15,16], SXIL [23] and stitching multi-grating EUV-IL/SXIL [17,18] and parts of the nanoscience applications of EUV-IL are taken from [27][28][29][30][31].…”

Section: Acknowledgementsmentioning

confidence: 99%

EUV/Soft X-Ray Interference Lithography

Shen¹,

Wu²

2018

Micro/Nanolithography - A Heuristic Aspect on the Enduring Technology

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“…19 Dot arrays with sizes down to 15 nm in diameter and 100 nm pitch and have been achieved employing this strategy (Figure 8b). 19,21 ATL is in fact a very efficient way to pattern large areas quickly, and uses the spectral distribution of the EUV light to its advantage. With ATL, at a certain distance from the transmission mask, called the achromatic distance, smearing and overlap of the self-images of the mask gives rise to a stationary intensity pattern.…”

Section: Large-area Nanoparticle Arrays As Model Systems For Catalysimentioning

confidence: 99%

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

et al. 2016

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Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

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“…41,42 Extreme ultraviolet (EUV) interference lithography and its variants can scale the EUV gratings pitch down to 50 nm and fabricate periodic structures smaller than 10 nm, but they suffer from the limitation of periodic patterns and uniformity in large areas. [43][44][45][46][47] Nanoimprint provides a low-cost approach to fabricating gratings with high spatial resolution. However, for many applications, there are still many challenges such as defects and template patterning.…”

Section: Introductionmentioning

confidence: 99%

Nanofabrication and characterization of high-line-density x-ray transmission gratings

Zhu

Cao

et al. 2017

J. Micro/Nanolith. MEMS MOEMS

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We report the nanofabrication and characterization of x-ray transmission gratings with a high aspect ratio and a feature size of down to 65 nm. Two nanofabrication methods, the combination of electron beam and optical lithography and the combination of electron beam, x-ray, and optical lithography, are presented in detail. In the former approach, the proximity effect of electron beam lithography based on a thin membrane of low-z material was investigated, and the x-ray transmission gratings with a line density of up to 6666 lines∕mm were demonstrated. In the latter approach, which is suitable for low volume production, we investigated the x-ray mask pattern correction during the electron beam lithography process and the diffraction effect between the mask and wafer during the x-ray lithography process, and we demonstrated the precise control ability of line width and vertical side-wall profile. A large number of x-ray transmission gratings with a line density of 5000 lines∕mm and Au absorber thickness of up to 580 nm were fabricated. The optical characterization results of the fabricated x-ray transmission gratings were given, suggesting that these two reliable approaches also promote the development of x-ray diffractive optical elements.

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Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility

Cited by 15 publications

References 14 publications

EUV/Soft X-Ray Interference Lithography

EUV/Soft X-Ray Interference Lithography

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

Nanofabrication and characterization of high-line-density x-ray transmission gratings

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