2009
DOI: 10.1088/0960-1317/19/4/047002
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Patterning PDMS using a combination of wet and dry etching

Abstract: PDMS films of 10 μm thickness can be patterned within 30 min by combining dry etching to achieve substantially vertical sidewalls with wet etching to achieve high etch rates and to protect the underlying substrate from attack. Dry etching alone would have taken 5 h, and wet etching alone would produce severe undercutting. In addition, using either technique alone produces undesirable surface morphologies. The mask used during etching is critical to a successful patterning outcome. E-beam evaporated Al was foun… Show more

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Cited by 85 publications
(57 citation statements)
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“…While the exact etching mechanism of PDMS in a CF 4 ∕O 2 plasma has not been determined, the material resembles a combination of silicon dioxide and a carbon-based polymer. 30 The PDMS was mixed in a 10∶1 ratio with its curing agent and then placed in a vacuum desiccator for at least 45 min to remove the bubbles created during mixing. There are at least two possible explanations for the increase in PDMS etch rate that occurs when oxygen is added to the CF 4 plasma.…”
Section: Proposed Approach and Resultsmentioning
confidence: 99%
“…While the exact etching mechanism of PDMS in a CF 4 ∕O 2 plasma has not been determined, the material resembles a combination of silicon dioxide and a carbon-based polymer. 30 The PDMS was mixed in a 10∶1 ratio with its curing agent and then placed in a vacuum desiccator for at least 45 min to remove the bubbles created during mixing. There are at least two possible explanations for the increase in PDMS etch rate that occurs when oxygen is added to the CF 4 plasma.…”
Section: Proposed Approach and Resultsmentioning
confidence: 99%
“…However it has a high potential as material for manufacturing of hundreds of nanometer thick polymer layers for e.g. sensor applications such as ISFETS membranes [26], and as membranes in the field of biomedical engineering [27][28].…”
Section: Solid Layers On Liquid Due To Plasma Induced Surface Polymermentioning
confidence: 99%
“…The front side processing is completed by opening the PDMS layer for the contact pads in a CF4:O2 plasma by using an Aluminum hard-etch mask (Fig. 6E) [13]. Processing continues on the backside of the wafer with DRIE etching of the silicon underneath the membrane, stopping on the 1 µm thick oxide etch-stop layer (Fig.…”
Section: Fabricationmentioning
confidence: 99%