Infrared
solar cells (IRSCs), capable of converting low-energy
infrared photons to electron–hole pairs, are promising infrared
optoelectronic devices because of their extended utilization region
of the solar to short-wavelength infrared region. For PbS QDs IRSCs,
charge extraction loss, easily generated at the interfaces, has been
one of the dominate obstacles impeding the improvement of device efficiencies
due to too many trap states and mismatched energy levels between the
photoactive layer and electron transport layer (ETL). Herein, an advanced
ZnO ETL was developed to improve the extraction of photogenerated
charges from the PbS QD photoactive layer to ETLs. The advanced ETL
film exhibited effectively suppressed trap states and better-matched
energy levels compared with the QD layer. As a consequence, high-performance
PbS QD IRSCs with the highest infrared power conversion efficiencies
of 1.26% under 1100 nm filtered solar illumination are achieved, suggesting
an effective and facile route for enhancing the charge extraction
in infrared photovoltaics.