Pd- and Pt-SiC Schottky diodes for detection of H2 and CH4 at high temperature

Kim, C.K; Lee, J.H; Choi, Seong Man; Noh, Ilkoo; Kim, H.R; Cho, N.I; Hong, Chih-Kai; Jang, Gun–Eik

doi:10.1016/s0925-4005(01)00725-0

Cited by 71 publications

(26 citation statements)

References 5 publications

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“…This intermixed region had a composition of Pd 67.8 at.%, Si 16.1 at. % and C 16.1 at.% suggesting the presence of Pd 4 Si at the Pd/SiC interface. Phase identification and crystallinity studies were performed by GIXRD analysis of all the Pd/SiC samples.…”

Section: Resultsmentioning

confidence: 98%

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Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Njoroge

Theron

Skuratov

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd 3 Si or (Pd 2 Si+Pd 4 Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd 2 Si was observed to form in the reaction zone. Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd 4 Si, Pd 9 Si 2 and Pd 5 Si phases which were identified by GIXRD analysis.

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Section: Resultsmentioning

confidence: 98%

“…Very sensitive high temperature hydrogen and hydrocarbon gas detectors can be fabricated from Pd/SiC Schottky diodes [3,4]. These sensors are necessary for many technological applications such as nuclear reactors where it is essential to monitor hydrogen levels for reactor safety.…”

Section: Introductionmentioning

confidence: 99%

Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Njoroge

Theron

Skuratov

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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“…This is due to the fact that the inhibition of water on the catalytic activity is not as strong as for Pd/Al 2 O 3 . Pt/SnO 2 [100] is however more severely deactivated than Pd/Al 2 O 3 upon steam ageing at 873 K and that would predict a shorter lifetime compared to Pd catalysts [12]. The presence of H 2 S induces a strong and irreversible deactivation of Pt/SnO 2.…”

Section: Nanocrystalline Metal Oxide-based Methane Sensorsmentioning

confidence: 99%

Nanocrystalline Metal Oxides for Methane Sensors: Role of Noble Metals

Basu

2009

Journal of Sensors

132

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Methane is an important gas for domestic and industrial applications and its source is mainly coalmines. Since methane is extremely inflammable in the coalmine atmosphere, it is essential to develop a reliable and relatively inexpensive chemical gas sensor to detect this inflammable gas below its explosion amount in air. The metal oxides have been proved to be potential materials for the development of commercial gas sensors. The functional properties of the metal oxide-based gas sensors can be improved not only by tailoring the crystal size of metal oxides but also by incorporating the noble metal catalyst on nanocrystalline metal oxide matrix. It was observed that the surface modification of nanocrystalline metal oxide thin films by noble metal sensitizers and the use of a noble metal catalytic contact as electrode reduce the operating temperatures appreciably and improve the sensing properties. This review article concentrates on the nanocrystalline metal oxide methane sensors and the role of noble metals on the sensing properties.

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“…Refractory metal gate SiC devices have been demonstrated for high temperature chemical sensing application by a number of groups [Spetz 2001, Filippov 1999, Hunter 2000, Kim 2001, Nakagomi 2001, Samman 2000, Serina 2001. These include hydrogen and hydrocarbon sensors operating at temperatures from 600K to 1300K.…”

Section: Disclaimermentioning

confidence: 99%

DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

Ghosh¹,

Tobias²

2003

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A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen containing species in chemically reactive, high temperature environments. The response of these metal/insulator/SiC (MISiC) devices to reducing gases has been assumed to be due to the reduction in the metal work function at the metal/oxide interface that shifts the capacitance to lower voltages. From in-situ capacitance-voltage measurements taken under sensor operating conditions we have discovered that two independent mechanisms are responsible for the sensor response to hydrogen and oxygen. We present a model of the device response based on the chemically induced shift of the metal/semiconductor barrier height as well as the passivation and creation of charged states at the SiO 2 /SiC interface. The latter mechanism is much slower than the barrier height shift. Preliminary photoemission experiments have been performed to independently monitor the contribution of the two phenomena. We discuss in detail the effect of these results on sensor design and the choice of operating point for high temperature operation.

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Pd- and Pt-SiC Schottky diodes for detection of H2 and CH4 at high temperature

Cited by 71 publications

References 5 publications

Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Nanocrystalline Metal Oxides for Methane Sensors: Role of Noble Metals

DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

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