PdSi Schottky diodes as hydrogen sensing devices: Capacitance-voltage characteristics

Effect of hydrogen on Pt/GaN Schottky diodes

“…2 have been reported for Pd/Si Schottky diodes. 24) Figures 3(a) and 3(b) show Nyquist plots for a Pt/GaN Schottky diode in pure N 2 and in 1% H 2 + N 2 at 0 V, respectively. As can be seen, the plots in both pure N 2 and in H 2 have a semicircular shape; this can be interpreted as equivalent RC parallel circuits representing the semiconductor space-charge region, where R and C are the resistance and capacitance of the semiconductor space-charge region, respectively.…”

Chemically induced charge carrier production and transport inPd∕SiO2∕n−Si(111)Cuenya1, Nienhaus2, McFarland3 2004Phys. Rev. B31030View full textAdd to dashboardCite

“…This observation may be due to the formation of a thin Pd silicide layer in the absence of thin SiO 2 intermediate layer. 24 Hence, the two different attenuation lengths for MS diodes may be attributed to, first, ballistic charge transport in the Pd-silicide layer and then transport through the Pd metal on top of the silicide.…”

“…The signal attenuation with thickness is also consistent with what is known of the hot carrier mean free path. 24 Thus, for energetic reactions, the currents in both the MS and MOS devices are generated by chemically induced excitation of hot charge carriers.…”