1982
DOI: 10.1080/00150198208208286
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Peculiar electric and photoelectric behavior of lead-containing perovskite-type oxides

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Cited by 49 publications
(15 citation statements)
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“…As in the cases of SrTiO 3 and BaTiO 3 , the bandgap in the bulk is indirect. 2 Two experimental studies [34,35] of the electron structure in BaZrO 3 published previously, indicated two different values for the bandgap: 5.0 eV and 5.33 eV, respectively. The discrepancy between the experimental and theoretical values suggests that the obtained bandgap is significantly underestimated.…”
Section: Electronic and Atomic Structurementioning
confidence: 98%
“…As in the cases of SrTiO 3 and BaTiO 3 , the bandgap in the bulk is indirect. 2 Two experimental studies [34,35] of the electron structure in BaZrO 3 published previously, indicated two different values for the bandgap: 5.0 eV and 5.33 eV, respectively. The discrepancy between the experimental and theoretical values suggests that the obtained bandgap is significantly underestimated.…”
Section: Electronic and Atomic Structurementioning
confidence: 98%
“…[4][5][6] Pb(In 1/2 Nb 1/2 )O 3 ͑PIN͒ lies very close to the phase boundary between the ordered phase and the disordered one. 7,8 It has been reported that the disordered PIN having the 20-30 nm ordered regions 8 shows the relaxor behavior, 5,8,9 while the ordered PIN having the 80-100 nm ordered regions 8 is isostructural with antiferroelectric PbZrO 3 ͑PZ͒ at room temperature. 7,8 We have previously examined phase transitions and dielectric properties of (1 Ϫx)PINϪxPZ ͑abbreviated Zr-PIN͒ and (1Ϫx)PIN ϪxPb(In 1/2 Yb 1/2 )O 3 ͑PYN͒ ͑abbreviated Yb-PIN͒ systems and have found the morphotropic phase boundary between pseudocubic ͑relaxor͒ and rhombohedral ͑ferroelectric͒ phases around xϭ0.35 for Zr-PIN 10 and that between pseudocubic ͑relaxor͒ and orthorhombic ͑similar to that of antiferroelectric ordered PYN͒ phases around xϭ0.20 for Yb-PIN.…”
Section: ͓S0003-6951͑96͒04224-6͔mentioning
confidence: 99%
“…[2][3][4][5] Pb͑In 1/2 Nb 1/2 ͒O 3 ͑PIN͒ lies very close to the boundary between order and disorder in the cation arrangement on the B-sites in a perovskite structure. [6][7][8] Disordered PIN is a relaxor and ordered PIN is antiferroelectric. [6][7][8][9] In this work, we form solid solutions from complex perovskite PIN and simple perovskite antiferroelectric PBZrO 3 ͑PZ͒ and investigate the composition dependence of the structure and dielectric properties of (1 Ϫx)PIN-xPZ system.…”
Section: Naohiko Yasuda and Takuya Mizunomentioning
confidence: 99%
“…[6][7][8] Disordered PIN is a relaxor and ordered PIN is antiferroelectric. [6][7][8][9] In this work, we form solid solutions from complex perovskite PIN and simple perovskite antiferroelectric PBZrO 3 ͑PZ͒ and investigate the composition dependence of the structure and dielectric properties of (1 Ϫx)PIN-xPZ system. (1Ϫx)PIN-xPZ is found to have two morphotropic phase boundaries at room temperature.…”
Section: Naohiko Yasuda and Takuya Mizunomentioning
confidence: 99%