2016
DOI: 10.1016/j.nimb.2015.08.046
|View full text |Cite
|
Sign up to set email alerts
|

Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

3
17
0
2

Year Published

2017
2017
2023
2023

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 19 publications
(22 citation statements)
references
References 13 publications
3
17
0
2
Order By: Relevance
“…where h',h -generation and registration depths of a particle respectively, n-interactions number, E 0primary particle initial energy, l=1/ 0 ak,  0 , a, k, E 0 -the approximation parameters entering the following recurrence relation [12][13][14][15][16][17][18]:…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…where h',h -generation and registration depths of a particle respectively, n-interactions number, E 0primary particle initial energy, l=1/ 0 ak,  0 , a, k, E 0 -the approximation parameters entering the following recurrence relation [12][13][14][15][16][17][18]:…”
Section: Resultsmentioning
confidence: 99%
“…When calculating CPF depending on interactions number and particles penetration depth and also vacancy type nanoclusters concentration needs to find real result finding area. We will note the main regularities when calculating CPF depending on interactions number arising when result finding area for various flying particles and heavy targets [11][12][13][14][15].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…A promising and rapidly developing direction in this field is the structures containing nanodimensional heterogeneity as an alternative to standard lithographic techniques in micro-and nanoelectronics [4][5][6][7]. Amorphous silicon dioxide on silicon substrate can RFYS be used as matrix.…”
Section: Introductionmentioning
confidence: 99%
“…Amorphous silicon dioxide on silicon substrate can RFYS be used as matrix. After irradiation with swift heavy ions (SHI) and the subsequent etching in hydrofluoric acid solution, the system of nanochannels divided by dielectric layer is created [4]. The obtained template with the nanopores system can be used for creation of nanoclusters of semiconductors as well as for development an active elements of gas sensors and light emission diodes (LED), also another various electronic devices.…”
Section: Introductionmentioning
confidence: 99%