2013
DOI: 10.1002/pssc.201200590
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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers

Abstract: Excitation‐intensity dependent photoluminescence (PL) as well as effective recombination time of a series of c‐plane GaN layers grown on sapphire substrates were measured at room temperature. It was shown that at low excitation level a high background free‐electron concentration causes an increase of radiative recombination rate in the near band edge region of GaN that results in an increase of the PL efficiency. In the investigated series, the GaN layers with lower crystal quality but having higher free‐elect… Show more

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