Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma

Lee, Byung Jun; Efremov, Alexander; Kim, Jihun; Kim, Changmok; Kwon, Kwang‐Ho

doi:10.1007/s11090-018-9943-x

Cited by 18 publications

(12 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The absence of qualitative (in the case of y(Cl2) = const) and quantitative (in the case of y(HBr) = const) correlation between the changes of R and (Mii) 1/2 + allows one to assume that the effective reaction probability is influenced by an additional factor connected with the chemistry of neutral species. Ac- cording to previously published works [13][14][15][16], this really may be the increasing flux of oxidative species O + OH (2.510 15 -6.810 16 cm -2 s -1 for y(Cl2) = const and 1.310 15 -3.410 16 cm -2 s -1 for y(HBr) = const at 1-25% O2) that influences the heterogeneous stages of the etching process through suppressing R. The mechanisms for such influence may be connected with 1) the direct oxidation of Si atoms into SiOx through surface defects (broken Si-Si bonds) produced by ion bombardment; and 2) the oxidation of Si + Cl/Br reaction products into lower volatile SiBrxOy and SiClxOy compounds.…”

Section: Experimental and Modeling Detailssupporting

confidence: 58%

“…The set of chemical reactions was taken from Refs. [15,16]. Corresponding kinetic schemes have demonstrated an acceptable agreement between model-predicted and measured plasma parameters for pure HBr, Cl2 and O2 plasmas [19][20][21].…”

Section: Experimental and Modeling Detailsmentioning

confidence: 74%

“…Experiments were performed in the planar inductively coupled plasma (ICP) reactor [15,16]. Plasma was excited using a 13.56 MHz RF power supply connected to a flat copper coil on the top side of the chamber.…”

Section: Experimental and Modeling Detailsmentioning

confidence: 99%

“…In our previous works [15,16], we have performed the combined (experimental and model-based) study to analyze plasma chemistry and Si etching kinetics in the ternary HBr+Cl2+O2 gas mixture. The most principal results were that 1) the composition of a feed gas influences the steady-state densities of neutral species through both electron-impact kinetics and gas-phase processes involving O, O( 1 D) and OH species; and 2) under the typical conditions of reactive-ion etching process, the silicon etching kinetics corresponds to the neutral-flux-limited regime as well as is affected by the oxidation of SiClx and SiBrx into lower volatile compounds.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

Efremov

Рыбкин

Бетелин

et al. 2019

IVKKT

Self Cite

View full text Add to dashboard Cite

The effects of both HBr/O2 and Cl2/O2 mixing ratios in HBr+Cl2+O2 gas mixture on plasma parameters, steady-state densities of active species and Si etching kinetics were studied under the typical conditions of reactive ion etching process: total gas pressure (p = 10 mTorr), input power (W = 500 W), bias power (Wdc = 200 W). The data on internal plasma parameters and plasma chemistry were obtained using a combination of Langmuir probe diagnostics and 0-dimensional (global) plasma modeling. It was found that the variation in HBr/O2 mixing ratio at constant Cl2 fraction in a feed gas is characterized by the stronger impact on the steady-state plasma composition through both electron-impact and atom-molecular reaction kinetics as well as allows one to obtain the wider change in the total halogen atom density. It was shown that changes in both HBr/O2 and Cl2/O2 mixing ratios toward O2-rich plasmas lowers the Si etching rate that exhibits no evident correlations with total halogen atom flux and ion energy flux. The model-based analysis of Si etching kinetics allowed one to conclude that the effective reaction probability for Si + Cl/Br heterogeneous reaction depends on the flux of oxidative species – oxygen atoms and OH radicals. The reasons may be 1) the oxidation of silicon resulting in higher reaction threshold energy; and 2) the decreasing fraction of free adsorption sites for Cl/Br atoms due to the oxidation of reaction products into the lower volatile SiBrxOy and SiClxOy compounds.

show abstract

Section: Experimental and Modeling Detailssupporting

confidence: 58%

Section: Experimental and Modeling Detailsmentioning

confidence: 74%

Section: Experimental and Modeling Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

Efremov

Рыбкин

Бетелин

et al. 2019

IVKKT

Self Cite

View full text Add to dashboard Cite

show abstract

“…From Refs. [72][73][74], it can be understood that both SiCl x O y and SiBr x O y compounds have much lower volatility compared with SiCl x and SiBr x . Therefore, if the same rule works for the fluorine-based etching chemistry, the oxidation of reaction products R52: SiF x (s.) + yO → SiF x O y (s.) must assume their ion-stimulated desorption pathway R53: SiF x O y (s.) → SiF x O y , which is less effective compared with both spontaneous desorption of SiF x (x = 4) and ion-stimulated desorption of SiF x (x < 4).…”

mentioning

confidence: 99%

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

2021

Self Cite

View full text Add to dashboard Cite

This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2, and SixNy) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the three-component systems composed either by one fluorocarbon component (СF4, C4F8, CHF3) with Ar and O2 or by two fluorocarbon components with one additive gas. The investigation scheme included plasma diagnostics by Langmuir probes and model-based analysis of plasma chemistry and heterogeneous reaction kinetics. The combination of these methods allowed one (a) to figure out key processes which determine the steady-state plasma parameters and densities of active species; (b) to understand relationships between processing conditions and basic heterogeneous process kinetics; (c) to analyze etching mechanisms in terms of process-condition-dependent effective reaction probability and etching yield; and (d) to suggest the set gas-phase-related parameters (fluxes and flux-to-flux ratios) to control the thickness of the fluorocarbon polymer film and the change in the etching/polymerization balance. It was shown that non-monotonic etching rates as functions of gas mixing ratios may result from monotonic but opposite changes in F atoms flux and effective reaction probability. The latter depends either on the fluorocarbon film thickness (in high-polymerizing and oxygen-less gas systems) or on heterogeneous processes with a participation of O atoms (in oxygen-containing plasmas). It was suggested that an increase in O2 fraction in a feed gas may suppress the effective reaction probability through decreasing amounts of free adsorption sites and oxidation of surface atoms.

show abstract

Computational characterization of capacitive coupled HBr/Cl₂/O₂ plasma

Gul

Iqbal

Khan

et al. 2022

Contributions to Plasma Physics

View full text Add to dashboard Cite

A self‐consistent two‐dimensional fluid model was used to study HBr/Cl2/O2 plasma discharge. A comprehensive set of 150 reactions comprising different processes (i.e., dissociation, ionization, and excitation) in tandem with 32 plasma species were considered in the computational model. The results revealed that the plasma reactions were dominated by 11 species (i.e., Cl, Cl+, Cl2+, H, H2, HCl, HCl+, Br, Br+, Br2, and HBr+), where the neutral species outnumbered the charged species. The density of charged species in the plasma reactor followed a bell shaped while the neutral species followed a double humped shaped distribution. The increase in plasma O2 concentration resulted in an initial decrease, followed by a gradual increase in the generation of Cl, Br, H, Cl+, and Br+ in the plasma discharge. A lower/higher concentration of oxygen in the plasma stimulated the densities of neutral/charged species, which facilitated the chemical/physical etching pathway. These findings provide new insights into the type of etching species and their optimization in the HBr/Cl2/O2 plasma discharge, with potential applications in the semiconductor industry.

show abstract

Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma

Cited by 18 publications

References 41 publications

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

Computational characterization of capacitive coupled HBr/Cl₂/O₂ plasma

Contact Info

Product

Resources

About

Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma

Cited by 18 publications

References 41 publications

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

Computational characterization of capacitive coupled HBr/Cl2/O2 plasma

Contact Info

Product

Resources

About

Computational characterization of capacitive coupled HBr/Cl₂/O₂ plasma