Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping

Safonov, D. A.; Виниченко, А. Н.; Каргин, Н.; Васильевский, И. С.

doi:10.1134/s106378501802027x

Cited by 5 publications

(4 citation statements)

References 15 publications

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“…It can be achieved in different ways: both by directly increasing the gap of zones at the boundary of the heterojunction [7], and by using various narrow-band inserts into the quantum well [8]. Another way to improve the characteristics is to use a spacer in the form of an AlAs/GaAs [9] superlattice, which leads to an increase in the mobility of a two-dimensional electron gas (2DEG) either due to a decrease in the spreading width of the δ-layer [10], or due to screening of the scattering potential of impurities by electrons in the X-valleys of the AlAs layers of the spacer [11] or a decrease in the degree of hybridization of electron wave functions in the QWs and in the donor region [12]. At the same time, 2DEG concentration can decrease both due to the difficulty of tunneling from donors to QWs through a higher barrier, and the capture of part of the electrons to the states of the X-valley of AlAs layers.…”

Section: Introductionmentioning

confidence: 99%

Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers

Pashkovskii A.B.,

Bogdanov S.A.,

Bakarov A. K.

et al. 2023

Semiconductors

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The nonlocal dynamics of electrons in pseudomorphic AlGaAs/GaAs/InGaAs heterostructures with double-sided donor-acceptor doping of AlGaAs barriers and additional digital potential barriers of short-period AlAs/GaAs superlattices around the doped regions has been theoretically studied. For the studied heterostructures, the introduction of digital barriers significantly, by 30-40%, increases the electrons drift velocity overshot when they enter the region of a strong field. The effect of localization of hot electrons on the states in AlAs/GaAs superlattices along the edges of the InGaAs quantum well is revealed. It is shown that taking this effect into account significantly increases the electrons drift velocity overshot, bringing it closer to the maximum theoretical limit for the model used --- the drift velocity overshot in the undoped InGaAs bulk material. Keywords: potential barriers, digital barriers, heterostructures, electrons drift velocity overshot.

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Section: Introductionmentioning

confidence: 99%

Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers

Pashkovskii A.B.,

Bogdanov S.A.,

Bakarov A. K.

et al. 2023

Semiconductors

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“…Due to the inherent high carrier mobility, higher quantum efficiency, and the compatible nature with telecommunication range, the InGaAs/GaAs QW platform attracts the scientific community's wide interest. Several groups are trying to control the transport and optical properties of charge carriers in InGaAs/GaAs QWs by using asymmetric fabrication techniques [18][19][20]. Cunha et al [18] investigated the lateral distribution profile of the charge carriers in onesided modulation-doped In 0.15 Ga 0.85 As/GaAs QWs, which are referred to asymmetrically doped QWs.…”

Section: Introductionmentioning

confidence: 99%

“…The luminescence scans are used to estimate the charge carrier diffusion lengths in undoped and asymmetrically doped QW structures. Safonov et al [19,20] also investigated the low-temperature electron transport properties in asymmetrically doped AlGaAs/In 0.2 Ga 0.8 As/GaAs high electron mobility transistor structures. Here, the low-temperature Shubnikov-de Haas and Hall measurements are performed to estimate the electron effective mass, non-parabolicity coefficient, quantum and transport scattering times.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells is investigated. Three sets of high-mobility InGaAs quantum well structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the quantum well, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in quantum well by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven Diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.

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“…In order to reduce resistance R on further, one needs to alter the electron density by raising the donor impurity density. However, the mobility of electrons decreases when their density exceeds (1.5−1.8) • 10 12 cm −2 [6]. This feature of electron mobility may lead to a reduction in conductivity.…”

mentioning

confidence: 99%

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Yu.

Dmitriev

Журавлев

et al. 2022

Technical Physics Letters

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The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: gmax=400 mS/mm, saturation current ID=380 mA/mm, ON-state resistance 1.0 Ω· mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P1 dB=21 dBm and IIP3=40 dBm. Keywords: Single-side doping, spacer design, maximal conductivity, pHEMT, switches.

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Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping

Cited by 5 publications

References 15 publications

Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers

Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

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