Peculiarities of the energy spectrum of InSb/InAs/InGaAs/InAlAs/GaAs nanoheterostructures revealed by room temperature photomodulation FTIR spectroscopy

Комков, О. С.; Firsov, D. D.; Andreev, A. D.; Chernov, M. Yu.; Соловьев, В. А.; Иванов, С. В.

doi:10.7567/1347-4065/ab180e

Cited by 5 publications

(2 citation statements)

References 28 publications

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“…В работах [18,102,104] измерение спектров ФО проводилось на модернизированном фурье-спектрометре VERTEX 80, также поддерживающем режим пошагового перемещения зеркала. Для исследований в средневолновом и длинноволновом (до 16 µm) ИК-диапазо-нах применялись фотовольтаический CdHgTe приемник (MCT photodetector), светоделитель (beamsplitter) из бромида калия (KBr) и глобар из карбида кремния (SiC).…”

Section: новая измерительная техника фо на основе фурье-спектрометраunclassified

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

Комков¹

2021

Физика Твердого Тела

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Photoreflectance is a contactless type of modulation optical spectroscopy. It is used to study the band structure features of monocrystalline semiconductors, their doping level, the composition of alloys, as well as surface and interface band bending. Using high-quality GaAs as an example, the possibilities of describing the photoreflectance lineshape by one-electron and exciton models are demonstrated. The spectra of ultrapure samples of this material exhibit an oscillating structure well described by excitonic effects. For III-V alloys, a review of photoreflectance results concerning the effect of composition and temperature on the band gap and spin-orbit splitting is carried out. Determination of the position of the Fermi level on the surface (Fermi level pinning) for III-V crystals is considered. The currently developing technique for measuring photoreflectance in the mid-infrared range (photomodulation Fourier transform infrared spectroscopy) is described in detail. It is shown that phase correction plays a decisive role in such measurements. Original results demonstrate the capabilities of this method in a wide wavelength range.

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Section: новая измерительная техника фо на основе фурье-спектрометраunclassified

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

Комков¹

2021

Физика Твердого Тела

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“…24 It has also enabled detailed study of the energy spectra of various quantum well structures based on narrow-gap semiconductor materials. [25][26][27] Within the framework of the current work, we intend to combine the method of modulation FT-IR spectroscopy with polarization-sensitive techniques to provide the possibility of measuring the RA spectra. Special emphasis is placed on the signal normalization required to obtain the correct shape of the polarization-modulated FT-IR spectra.…”

Section: Introductionmentioning

confidence: 99%

Fourier Transform Infrared Reflection Anisotropy Spectroscopy of Semiconductor Crystals and Structures: Development and Application in the Mid-Infrared

Firsov

Комков

2023

Appl Spectrosc

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A new method of reflection anisotropy spectroscopy (RAS) with increased mid-IR efficiency owing to the use of a Fourier-transform infrared (FT-IR) spectrometer has been developed. An optical setup was implemented using a photoelastic modulator (PEM) to modulate the direction of linear polarization of the probe beam originating from the Michelson interferometer. An original measurement algorithm was proposed to eliminate the influence of spectral inhomogeneity of the PEM efficiency on the obtained spectra via appropriate calibration. It was shown that to preserve the sign of the RAS signal, it is necessary to use a specialized procedure for phase correction of the interferogram registered by the FT-IR spectrometer. In the visible range, good agreement was confirmed between the obtained reflection anisotropy (RA) spectra of a semiconductor crystal and the results of independent measurements using a conventional diffraction grating spectrometer-based setup. The RA spectrum of a III-V semiconductor heterostructure in the mid-infrared range (λ up to 8 µm) is demonstrated. Application of the developed FT-IR RAS method to layered black phosphorus has enabled characterization of anisotropic interband transitions in a graphene-like semiconductor crystal.

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Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide

Chernov

Соловьев

Комков

et al. 2020

Journal of Applied Physics

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We report on structural and optical studies of metamorphic InAs(Sb)/In(Ga,Al)As quantum well (QW) heterostructures with different designs of the active region, grown by molecular beam epitaxy on GaAs substrates and emitting in the mid-IR spectral range (3.0–3.5 μm) at room temperature. The influence of the thickness of the InGaAs/InAlAs superlattice waveguide and design of the InSb/InAs/InGaAs QW on stress balance in such metamorphic structures, their luminescent properties, and density of extended defects in the active region is discussed. The peculiarities of electron and hole energy spectra of the active region vs stress and design are studied theoretically in the framework of the 8-band Kane model and verified experimentally by Fourier-transform infrared photoreflectance spectroscopy. Despite that optimized metamorphic heterostructures are characterized by the extended defect density in the active region of just about 107 cm−2, carrier confinement in the QW has a stronger impact on their mid-IR photoluminescence intensity at room temperature.

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Peculiarities of the energy spectrum of InSb/InAs/InGaAs/InAlAs/GaAs nanoheterostructures revealed by room temperature photomodulation FTIR spectroscopy

Cited by 5 publications

References 28 publications

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

Fourier Transform Infrared Reflection Anisotropy Spectroscopy of Semiconductor Crystals and Structures: Development and Application in the Mid-Infrared

Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide

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