PECVD Diamond-Based High Performance Power Diodes

Abstract

In this study, we have designed, fabricated, characterized, and analyzed plasma-enhanced chemical vapor deposition (PECVD) diamond-based Schottky diodes for high power electronics applications. We have elaborated four critical issues in the synthetic-diamond semiconductor technology: 1) growth, 2) doping, 3) Schottky contact, and 4) different device structures in order to achieve better performance parameters. We have obtained 500 V of breakdown voltage on one device and 100 A/cm 2 of current density on another device, optimized for different applications. These values are among the highest reported with the polycrystalline diamond-based devices. We have utilized different fabrication techniques for the growth of PECVD-diamond, different metals as a Shottky contact on diamond film and also optimized structural parameters such as diamond film thickness and doping concentration in order to achieve a high-performance power diodes. Analysis of the current conduction mechanisms of these devices in this study revealed a space-charge-limited current conduction mechanism in the forward bias region while thermionic field emission controlled current conduction mechanism in the reverse bias region. Performance parameters such as forward voltage drop, barrier height, and current density were analyzed as a function of temperature and type of metal Schottky contacts. Laboratory. He conducts applied research in advanced electronic materials and microelectronic microsensors and is developing programs in synthetic diamond and other rugged advanced wide band gap semiconductors for electronic, biological, and mechanical applications. He made first determinations of elastic modulus, tensile strength, chemical sensing properties, tip electron emission of diamond films, and developed first technology for patterning diamond films. He designed, fabricated, developed, and characterized first diamond MEMS sensors, diamond-based chemical sensors, resistors, capacitors, and highly efficient diamond microemitter vacuum microelectronic devices. He has over 100 publications and six patents in this area.

Diamond growth by chemical vapour deposition

“…Several diamond-based devices have already been developed, such as transistors operating in the microwave range [14], high-temperature diodes [15], thermistors [16] and transistors [17], laser windows [18] and solid-state detectors [19]. Diamond field emitters and cold cathodes take also advantage of the NEA [20].…”

DC-65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches

“…Plasmaenhanced chemical vapor deposition (PECVD) offers low contaminant concentration, relatively low growth temperatures, predictable film quality, and is compatible with MEMS fabrication processes. Coupled with bias-enhanced nucleation (BEN) [7], [8] smooth films can be produced by reducing the grain size of the diamond crystals.…”

Diamond / SiC heterojunctions

“…Both p and n-type diamond films can be prepared by CVD, meaning that the desirable electronic properties exhibited by a few, very rare natural diamonds can now be achieved in an engineered diamond material [10][11][12]. The electrical properties of diamond and diamond-based devices have been widely published and different types of diamond devices have already been fabricated [13][14][15][16][17][18][19][20]. The combination of SiC and diamond is expected to lead to devices with improved thermal management and power capability.…”