PECVD synthesis, optical and mechanical properties of silicon carbon nitride films

Ermakova, Е. N.; Rumyantsev, Yurii M.; Шугуров, А. Р.; Панин, А. В.; Kosinova, Marina

doi:10.1016/j.apsusc.2015.02.155

Cited by 41 publications

(7 citation statements)

References 41 publications

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“…The Si 2p elemental peak at ~ 104 eV of the asdeposited sample was deconvoluted into three peaks centered at about 101.2, 101.9 and 102.7 eV as shown in Fig. 1(f), which is corresponded to Si-O, Si-N, and Si-C bonds, respectively [27][28][29]. The peak of C 1 s observed at ~ 287.1 eV can be assigned to peaks at 284.6, 285.5 and 288.3 eV as shown in Fig.…”

Section: Nano Structure Of Sicn Samplementioning

confidence: 99%

Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment

Chen

et al. 2021

Applied Surface Science

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Section: Nano Structure Of Sicn Samplementioning

confidence: 99%

Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment

Chen

et al. 2021

Applied Surface Science

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“…In the synthesis of SiC x N y films, several precursors have been used, including single-source precursors, such as hexamethyldisilazane, bis(dimethylamino)dimethylsilane, tris(dimethylamino)silane, tris(diethylamino)silane, and multicomponent gas mixtures—SiH(CH 3 ) 3 + N 2 + H 2 + Ar, SiH 4 + CH 4 + N 2 , Si(CH 3 ) 4 + NH 3 , etc. [ 91 ].…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

“…Table 1 lists the mechanical properties of SiC films produced by different CVD methods [ 9 , 91 , 122 , 123 ]. As can be seen, the elastic modulus and hardness of the films depend on the type of CVD method used for film deposition.…”

Section: Cvd-based Sic Requirements For Development Of Mems/nems Dmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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“…[11][12][13][14]. The problems of controlling the deposition process are usually due to the limited information on the properties of precursor.…”

Section: Introductionmentioning

confidence: 99%

Thermal properties of some organosilicon precursors for chemical vapor deposition

Ermakova

Сысоев

Nikolaev

et al. 2016

J Therm Anal Calorim

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Five volatile organosilicon compounds: trimethyl (phenyl)silane Me 3 SiC 6 H 5 (I), trimethyl(cyclohexyl)silane Me 3 SiC 6 H 11 (II), trimethyl(phenoxy)silane Me 3 SiOC 6 H 5 (III), trimethyl(cyclohexyloxy)silane Me 3 SiOC 6 H 11 (IV), and trimethyl(allyloxy)silane Me 3 SiOC 3 H 5 (V) were synthesized, purified, and identified. Data of IR spectroscopy; gas-liquid chromatography; and 1 H NMR, 13 C NMR, 29 Si NMR analyses were used to identify and confirm the high purity of the compounds (more than 99.6 %). The thermal stability of the compounds was investigated by DTA-TG. The quantitative data on temperature dependences of the saturated vapor pressure of the compounds were obtained by static tensimetry method with glass membrane null manometer. The volatilities of compounds Me 3 SiOC 6 H 5 , Me 3 SiC 6 H 5 , Me 3 SiC 6 H 11 , Me 3 SiOC 6 H 11 were shown to be close due to the presence of large-size phenyl/cyclohexyl group. The replacement of phenyl/cyclohexyl group by allyl substituent in the molecule led to significant increase in volatility for Me 3 SiOC 3 H 5 in comparison with compounds mentioned before. The vapor pressure of all of the compounds is enough to use them as precursors in CVD processes without additional heating. The thermodynamic parameters (enthalpies and entropies) of vaporization processes for four compounds II-V were determined for the first time.

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PECVD synthesis, optical and mechanical properties of silicon carbon nitride films

Cited by 41 publications

References 41 publications

Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment

Blue-violet emission of silicon carbonitride thin films prepared by sputtering and annealing treatment

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Thermal properties of some organosilicon precursors for chemical vapor deposition

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