PECVD technology for low-temperature fabrication of silica-on-silicon-based channel waveguides and devices

Wosinski, Lech; Sahu, J.K.; Dainese, Matteo; Fernando, Harendra N. J.

doi:10.1117/12.406444

Cited by 7 publications

(4 citation statements)

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“…Used materials and (details of) applied technologies generally depend on the intended application. For sensors mainly relatively cheap technologies are used: the SiON technology [16][17][18], in-diffusion of glasses [19] and polymer technologies [20] or hybrids of these [21]. Out of these the SiON technology is most flexible because it affords for depositing SiON layers with refractive indices in the range 1.45-2.0.…”

Section: Integrated Opticsmentioning

confidence: 99%

Integrated optical sensors for the chemical domain

Lambeck

2006

Meas. Sci. Technol.

197

150

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During the last decade there has been a rapidly growing interest in integrated optical (IO) sensors, especially because many of them principally allow for sensitive, real-time, label-free on-site measurements of the concentration of (bio-) chemical species. This review aims at giving an overview of the most relevant developments in this area. After a general introduction into the field of IO sensors for the chemical domain, relevant aspects of integrated optics and chemical sensing are presented in short. A large variety of IO sensing platforms are introduced and discussed: interferometers, resonators, coupling-based devices such as grating couplers and surface plasmon resonance based sensors and finally a new class of sensors based on chemically induced field profile changes. Strong and weak points of principle and of configurations based on these principles are indicated and the main performance data of the IO sensing platforms, especially the obtained resolution, are indicated. Best resolutions of the chemically induced refractive indices on the order of magnitude 10−6–10−8 RIU can be obtained, corresponding to a resolution of 10−3–10−5 nm in the chemically induced growth of layer thickness of chemo-optical transducer materials. Depending on the analyte and the type of transduction layer chemical concentrations down to some ppb or some pg ml−1 can be determined. Several IO sensing systems are commercially available. Extension of individual sensors to sensor arrays is treated and finally an outlook for the future is given.

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Section: Integrated Opticsmentioning

confidence: 99%

Integrated optical sensors for the chemical domain

Lambeck

2006

Meas. Sci. Technol.

197

150

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“…As seen in figure 3(a) the higher value of the Si-O stretching frequency of the Si-O-Si bridge (higher bond angle), compared with sample B, approaches the value of the thermal oxide (1095 cm −1 [23], with a relaxed structure) with high ion bombardment.…”

Section: Resultsmentioning

confidence: 87%

Engineering UV-photosensitivity in planar lightwave circuits by plasma enhanced chemical vapour deposition

Fernando¹,

Canning²,

Wosinski³

et al. 2004

J. Phys. D: Appl. Phys.

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Ion bombarding conditions were used to modify glass properties in silica-on-silicon systems during plasma enhanced chemical vapour deposition (PECVD). The induced structural modifications in the SiO2/Si system resulted in different photosensitive responses when irradiated by ArF pulsed laser operating at 193 nm wavelength. Fourier transform infrared spectroscopy was used to study the structural modifications triggered by ion bombarding conditions during film growth. The results were further confirmed by additional characterizations with regard to density (etch rate), refractive index and surface topographic measurements. The demonstrated method could be used not only to engineer UV-photosensitivity but also to control and compensate birefringence in planar lightwave devices.

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“…This flexibility can be offered by alternative technologies, where the different material layers are deposited during the technological process and can be individually adjusted depending on the demands. ICTON 2008 In our case we use our optimised low temperature plasma enhanced chemical vapour deposition (PECVD) technology to fabricate different layers of silica [2], amorphous silicon [3] and other dielectric materials if needed. Here all the processing steps can be done in the same chamber, layer by layer with possibility to build alternating layer structures, where thicknesses and refractive indices of the layers can be separately adjusted.…”

Section: Technologymentioning

confidence: 99%

Silicon technology for photonic crystal- and nanowire devices

Wosinski¹,

Jaskorzyńska²

2008

2008 10th Anniversary International Conference on Transparent Optical Networks

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In this talk we will discuss issues related to technology for dense photonic integration based on silicon platform, and review two alternatives to achieve this goal within the diffraction limit; photonic nanowires and photonic crystal waveguides. We will also present examples of our demonstrators to illustrate the feasibility of photonic wires for device miniaturization and benefits offered by photonic crystal dispersion.

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PECVD technology for low-temperature fabrication of silica-on-silicon-based channel waveguides and devices

Cited by 7 publications

References 0 publications

Integrated optical sensors for the chemical domain

Integrated optical sensors for the chemical domain

Engineering UV-photosensitivity in planar lightwave circuits by plasma enhanced chemical vapour deposition

Silicon technology for photonic crystal- and nanowire devices

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