2014
DOI: 10.1002/masy.201300227
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PEG‐Bis Phosphonic Acid Based Ionic Supramolecular Structures

Abstract: Summary: A number of supramolecular structures are prepared by mixing stoichiometric amounts of a phosphonic acid terminated poly(ethylene glycol) with propargyl amine, hexamethylene diamine, tris(2-aminoethyl)amine, and the first generation of a poly(propylene imine) dendrimer in turn at room temperature. The resulting ionic assemblies are very comprehensively characterized by ATR-FTIR, proton, and carbon-13 NMR spectroscopy that unequivocally demonstrate the ionic network formation through ammonium phophonat… Show more

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Cited by 2 publications
(2 citation statements)
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“…Additionally, other strong peaks are to be observed at different wavenumbers, for example stretches typical for carboxylic salts at around 1565 cm À1 and 1425 cm À1 (Fig. 12), which was shown by Gonzalez et al 20,21 In the case of graing larger molecules, such as DFHA, there are no signicant changes in FTIR spectra, although contact angle measurements show substantial divergence in wetting properties.…”
Section: Preparing Microuidic Devicementioning
confidence: 67%
“…Additionally, other strong peaks are to be observed at different wavenumbers, for example stretches typical for carboxylic salts at around 1565 cm À1 and 1425 cm À1 (Fig. 12), which was shown by Gonzalez et al 20,21 In the case of graing larger molecules, such as DFHA, there are no signicant changes in FTIR spectra, although contact angle measurements show substantial divergence in wetting properties.…”
Section: Preparing Microuidic Devicementioning
confidence: 67%
“…Ionic self-assembly of telechelic polymers with ionic cross-linkers has been shown as an easy and versatile method for preparing supramolecular structures. [2][3][4][5] High-permittivity materials are attractive for a broad range of applications where high electric energy storage is required. Examples of current materials with high relative dielectric permittivities are ferroelectric materials, 6 which are used as capacitors in microelectronics.…”
Section: Introductionmentioning
confidence: 99%