Abstract:The impact of different variability sources on the transistor performance increases as devices are scaled-down, being the metal grain granularity (MGG) and the line edge roughness (LER) some of the major contributors to this increase. Variability studies require the simulation of large samples of different device configurations to have statistical significance, increasing the computational cost. A novel Pelgrom-based predictive (PBP) model that estimates the impact of MGG and LER through the study of the thres… Show more
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