Penetration of liquid metals into solid metals and liquid metal embrittlement

Ina, K.; Koizumi, Hirokazu

doi:10.1016/j.msea.2004.05.042

Cited by 73 publications

(25 citation statements)

References 14 publications

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“…These metals exhibit a drastic loss of ductility in the presence of certain liquid-metals, such as gallium (Ga), bismuth (Bi), and mercury (Hg) [1][2][3][4][5][6][7][8][9][10]. Understanding the mechanisms behind LME has been of particular interest in both experimental [2,3,5,8,[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] and simulation [7,9,[26][27][28][29][30][31][32][33] research.…”

Section: Introductionmentioning

confidence: 99%

Atomic-scale analysis of liquid-gallium embrittlement of aluminum grain boundaries

et al. 2014

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Material strengthening and embrittlement are controlled by intrinsic interactions between defects, such as grain boundaries (GB), and impurity atoms that alter the observed deformation and failure mechanisms in metals. In this work, we explore the role of atomistic-scale energetics on liquid-metal embrittlement of aluminum (Al) due to gallium (Ga). Ab initio and molecular mechanics were employed to probe the formation/binding energies of vacancies and segregation energies of Ga for <100>, <110> and <111> symmetric tilt grain boundaries (STGBs) in Al. We found that the GB local arrangements and resulting structural units have a significant influence on the magnitude of vacancy binding energies. For example, the mean vacancy binding energy for <100>, <110>, and <111> STGBs at 1 st layer was found to be -0.63 eV, -0.26 eV, and -0.60 eV. However, some GBs exhibited vacancy binding energies closer to bulk values, indicating interfaces with zero sink strength, i.e., these GBs may not provide effective pathways for vacancy diffusion. The results from the present work showed that the GB structure and the associated free volume also play significant roles in Ga segregation and the subsequent embrittlement of Al. The Ga mean segregation energy for <100>, <110> and <111> STGBs at 1 st layer was found to be -0.23 eV, -0.12 eV and -0.24 eV, respectively, suggesting a stronger correlation between the GB structural unit, its free volume, and segregation behavior. Furthermore, as the GB free volume increased, the difference in segregation energies between the 1 st layer and the 0 th layer increased. Thus, the GB character and free volume provide an important key to understanding the degree of anisotropy in various systems. The overall characteristic Ga absorption length scale was found to be about ~10, 8, and 12 layers for <100>, <110>, and <111> STGBs, respectively. Also, a few GBs of different tilt axes with relatively high segregation energies (between 0 and -0.1 eV) at the boundary were also found. This finding provides a new atomistic perspective to the GB engineering of materials with smart GB networks to mitigate or control LME and more general embrittlement phenomena in alloys.

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Section: Introductionmentioning

confidence: 99%

Atomic-scale analysis of liquid-gallium embrittlement of aluminum grain boundaries

et al. 2014

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“…This specific property of liquid Ga was confirmed recently by Koizumi et al [16][17][18] by use of ultrasonic attenuation measurements in an "Al thin film-Ga" system [16]. The wide temperature range of existence of the liquid phase enabled measurements of the GBP rate of Ga across a wide temperature range, thus allowing reliable data on the activation energy of the process to be acquired.…”

Section: Introductionmentioning

confidence: 57%

Interaction of liquid and solid gallium with thin silver films: Synchronized spreading and penetration

et al. 2011

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“…Consecutively, many experimental efforts have been made until recently to explore the segregation behavior of Ga in the Al GB. [3][4][5][6][7] These experiments provide the evidence that the Al intergranular embrittlement is caused by Ga GB-segregation, and should be related with the GB weakening. On the other hand, only limited computational studies have been performed about this important issue, in which the GB structure and energetics with Ga segregation have been investigated.…”

Section: Introductionmentioning

confidence: 64%

Effects of Segregated Ga on an Al Grain Boundary: A First-Principles Computational Tensile Test

et al. 2006

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We perform a first-principles computational tensile test (FPCTT) to investigate the effect of segregated Ga (substitutional) on an Al grain boundary (GB). We show that isolated Ga segregation has little effect on the tensile strength of the Al GB, but greatly reduces the toughness and the Griffith fracture energy. The interfacial Al-Ga bond with some ionic character is suggested to be responsible for the nearly unchanged tensile strength and the toughness reduction. Based on the bond length evolution result, we further demonstrate that GB fracture is directly associated with interfacial Al-Ga bonds.

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Penetration of liquid metals into solid metals and liquid metal embrittlement

Cited by 73 publications

References 14 publications

Atomic-scale analysis of liquid-gallium embrittlement of aluminum grain boundaries

Atomic-scale analysis of liquid-gallium embrittlement of aluminum grain boundaries

Interaction of liquid and solid gallium with thin silver films: Synchronized spreading and penetration

Effects of Segregated Ga on an Al Grain Boundary: A First-Principles Computational Tensile Test

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