Penile strangulation due to a metal ring: A case report

K, Matsumiya; Kawahara, Takashi; Yamashita, Yasunobu; Hayashi, Yutaro; Shimokihara, Kota; Tsutsumi, Sohgo; Takamoto, Daiji; Mochizuki, Takashi; Hattori, Yusuke; Teranishi, Jun‐ichi; Miyoshi, Yasuhide; Yumura, Yasushi; Yao, Masahiro; Uemura, Hiroji

doi:10.5348/ijcri-201771-cr-10810

Cited by 16 publications

(15 citation statements)

References 6 publications

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“…Using an energy band diagram, the corresponding mechanism of the hysteresis behavior is illustrated in figure 1(d). When a positive bias was applied to the top gate, electrons passed through the Al 2 O 3 tunnel barrier and became trapped at shallow trap states corresponding to the Al metals below the conduction band edge [24,25]. By contrast, the trapped electrons were released into the channel via an opposite negative gate voltage.…”

Section: Resultsmentioning

confidence: 99%

In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy

Kwon

Park

et al. 2022

Nanotechnology

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The reliable conductance modulation of synaptic devices is key when implementing high-performance neuromorphic systems. Herein, we propose a floating gate IGZO synaptic device with an aluminum trapping layer to investigate the correlation between its diverse electrical parameters and pattern recognition accuracy. Basic synaptic properties such as excitatory postsynaptic current, paired pulse facilitation, long/short term memory, and long-term potentiation/depression are demonstrated in the IGZO synaptic transistor. The effects of pulse tuning conditions associated with the pulse voltage magnitude, interval, duration, and cycling number of the applied pulses on the conductance update are systematically investigated. It is discovered that both the nonlinearity of the conductance update and cycle-to-cycle variation should be critically considered using an artificial neural network simulator to ensure the high pattern recognition accuracy of Modified National Institute of Standards and Technology (MNIST) handwritten digit images. The highest recognition rate of the MNIST handwritten dataset is 94.06% for the most optimized pulse condition. Finally, a systematic study regarding the synaptic parameters must be performed to optimize the developed synapse device.

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Section: Resultsmentioning

confidence: 99%

In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy

Kwon

Park

et al. 2022

Nanotechnology

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“…The currently reported highly efficient PSC devices are generally fabricated via solution-based film preparation technologies, including spin coating, [181][182][183] doctor blading, [184][185][186] screen printing, [187] inkjet printing. [188,189] spray coating, [190,191] slot-die coating [192,193] and so on. These methods have been used in the laboratory with outstanding results, but it is still a great challenge to realize mass production of highly efficient FPSCs.…”

Section: Preparation and Application Of Large-area Recoverable Fpscsmentioning

confidence: 99%

Recoverable Flexible Perovskite Solar Cells for Next‐Generation Portable Power Sources

Liu

et al. 2023

Angew Chem Int Ed

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Flexible perovskite solar cells (FPSCs) with excellent recoverability show a wide range of potential applications in portable power sources. The recoverability of FPSCs requires outstanding bendability of each functional layer, including the flexible substrates, electrodes, perovskite light absorbers, and charge transport materials. This review highlights the recent progress and practical applications of high‐recoverability FPSCs, and illustrates the routes toward improvement of the recoverability and environmental stability through the choice of flexible substrates and the preparation of high‐quality perovskite films, as well as the optimization of charge‐selective contacts. In addition, we explore the intrinsic properties of each functional layer from the physical perspective and analyze how to select suitable functional layers. Additionally, some effective strategies are summarized, including material modification engineering of selective contacts, additives and interface engineering of interlayers, which can release mechanical stress and increase the power‐conversion efficiency (PCE) and recoverability of the FPSCs. The challenges of making high‐performance FPSCs with long‐term stability and high recoverability are discussed. Finally, future applications and perspectives for FPSCs are discussed, aiming to promote more extensive commercialization processes for lightweight and durable FPSCs.

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“…In order to achieve multilevel date storage, memory properties, such as memory window and retention time, need to be enhanced [16,17]. To date, metallic NPs, particularly gold (Au) NPs, are widely used as floating gate materials in NFGOFETMs owing to their suitable work function and high air stability [21]. The floating gate layer based on metallic NPs is commonly deposited by the expensive high-vacuum manufacturing processes and cannot easily control the shape, size, and density of metallic NPs [11,22].…”

Section: Introductionmentioning

confidence: 99%

Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate

Jin¹,

Shi²,

Qiu³

et al. 2021

Nanotechnology

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Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other fields because of their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, good dispersion and low cost. Herein, for the first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance the memory performance. The resulting organic nano-floating gate memory (NFGM) device exhibits outstanding memory properties, including tremendous memory window (∼85 V), superhigh memory on/off ratio (∼109), long data retention (over 10 years) and eminent multilevel storage behavior, which are among the optimal performances in NFGM devices based on organic field effect transistors. Additionally, the device displays photoinduced-reset characteristic with low energy consumption erasing operation. This study provides novel avenues for the manufacture of simple and low-cost data storage devices with outstanding memory performance, multilevel storage behavior and suitability as platforms for integrated circuits.

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Penile strangulation due to a metal ring: A case report

Cited by 16 publications

References 6 publications

In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy

In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy

Recoverable Flexible Perovskite Solar Cells for Next‐Generation Portable Power Sources

Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate

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